Invention Grant
- Patent Title: Bonding-substrate fabrication method, bonding substrate, substrate bonding method, bonding-substrate fabrication apparatus, and substrate assembly
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Application No.: US13982686Application Date: 2012-01-30
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Publication No.: US10166749B2Publication Date: 2019-01-01
- Inventor: Tadatomo Suga , Akira Yamauchi , Ryuichi Kondou , Yoshiie Matsumoto
- Applicant: Tadatomo Suga , Akira Yamauchi , Ryuichi Kondou , Yoshiie Matsumoto
- Applicant Address: JP Tokyo JP Tokyo
- Assignee: LAN TECHNICAL SERVICE CO., LTD.,TADATOMO SUGA
- Current Assignee: LAN TECHNICAL SERVICE CO., LTD.,TADATOMO SUGA
- Current Assignee Address: JP Tokyo JP Tokyo
- Agency: Pearne & Gordon LLP
- Priority: JP2011-019060 20110131
- International Application: PCT/JP2012/051936 WO 20120130
- International Announcement: WO2012/105474 WO 20120809
- Main IPC: H01L21/20
- IPC: H01L21/20 ; B32B38/08 ; B23K1/20 ; B23K20/24 ; H01L21/67 ; H01L21/762 ; H01L21/302 ; H01L21/02 ; H01L23/525 ; B32B7/04 ; H01J37/317 ; B23K101/36 ; H01L23/14
Abstract:
[Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.
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