- 专利标题： Etch stop for airgap protection
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申请号： US15782380申请日： 2017-10-12
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公开(公告)号： US10177237B2公开(公告)日： 2019-01-08
- 发明人: Kangguo Cheng , Ruilong Xie , Tenko Yamashita
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION , GLOBALFOUNDRIES INC.
- 申请人地址： US NY Armonk KY Grand Cayman
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,GLOBALFOUNDRIES INC.
- 当前专利权人地址： US NY Armonk KY Grand Cayman
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L21/8234
- IPC分类号： H01L21/8234 ; H01L29/49 ; H01L29/66 ; H01L21/311 ; H01L21/31 ; H01L21/283 ; H01L21/768 ; H01L23/522 ; H01L21/764 ; H01L21/28 ; H01L29/417 ; H01L29/423 ; H01L29/78 ; H01L29/40 ; H01L21/8238 ; H01L29/51
摘要：
A semiconductor device that includes a gate structure on a channel region of a semiconductor device. Source and drain regions may be present on opposing sides of the channel region. The semiconductor device may further include a composite gate sidewall spacer present on a sidewall of the gate structure. The composite gate sidewall spacer may include a first composition portion having an air gap encapsulated therein, and a second composition portion that is entirely solid and present atop the first composition portion.
公开/授权文献
- US20180053831A1 ETCH STOP FOR AIRGAP PROTECTION 公开/授权日：2018-02-22
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