Invention Grant
- Patent Title: LED structures for reduced non-radiative sidewall recombination
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Application No.: US15828081Application Date: 2017-11-30
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Publication No.: US10193013B2Publication Date: 2019-01-29
- Inventor: David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Jaffery Watson Mendonsa & Hamilton LLC
- Main IPC: H01L33/06
- IPC: H01L33/06 ; H01L33/00 ; H01L33/44 ; H01L33/30 ; H01L33/14 ; H01L33/20 ; H01L33/24 ; H01L33/56
Abstract:
LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
Public/Granted literature
- US20180097145A1 LED STRUCTURES FOR REDUCED NON-RADIATIVE SIDEWALL RECOMBINATION Public/Granted day:2018-04-05
Information query
IPC分类:
