公开(公告)号：US11837179B2

公开(公告)日：2023-12-05

申请号：US17063371

申请日：2020-10-05

Applicant: Apple Inc.

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Kelly McGroddy

IPC: G09G3/20 ,  G09G3/32 ,  H01L25/075 ,  H01L25/16 ,  G09G3/34 ,  G09G3/3233 ,  G09G3/3266 ,  G09G3/3216

CPC classification number: G09G3/3426 ,  G09G3/2088 ,  G09G3/32 ,  G09G3/3216 ,  G09G3/3233 ,  G09G3/3266 ,  H01L25/0753 ,  H01L25/167 ,  G09G2300/0828 ,  G09G2300/0842 ,  G09G2300/0857 ,  G09G2310/027 ,  G09G2310/08 ,  G09G2320/029 ,  G09G2330/028 ,  H01L2924/0002 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A light emitting assembly is described. In one embodiment, one or more light emitting diode (LED) devices and one or more microcontrollers are bonded to a same side of a substrate, with the one or more microcontrollers to switch and drive the one or more LED devices.

公开(公告)号：US10446712B2

公开(公告)日：2019-10-15

申请号：US16219897

申请日：2018-12-13

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US20220013688A1

公开(公告)日：2022-01-13

申请号：US17388949

申请日：2021-07-29

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L23/00 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L27/01 ,  H01L33/06 ,  H01L33/30 ,  H01L33/42

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：US11101405B2

公开(公告)日：2021-08-24

申请号：US16783737

申请日：2020-02-06

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L23/00 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L27/01 ,  H01L33/06 ,  H01L33/30 ,  H01L33/42 ,  G09G3/32 ,  H01L33/16 ,  H01L33/20

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：US20190371964A1

公开(公告)日：2019-12-05

申请号：US16545919

申请日：2019-08-20

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US10380952B2

公开(公告)日：2019-08-13

申请号：US15908499

申请日：2018-02-28

Applicant: Apple Inc.

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Kelly McGroddy

IPC: G09G3/34 ,  G09G3/3233 ,  H01L25/075 ,  H01L25/16 ,  G09G3/3266 ,  G09G3/3216 ,  G09G3/20 ,  G09G3/32

Abstract: A light emitting assembly is described. In one embodiment, one or more light emitting diode (LED) devices and one or more microcontrollers are bonded to a same side of a substrate, with the one or more microcontrollers to switch and drive the one or more LED devices.

公开(公告)号：US20170162553A1

公开(公告)日：2017-06-08

申请号：US15438587

申请日：2017-02-21

Applicant: Apple Inc.

Inventor： Andreas Bibl ,  Kelly McGroddy

IPC: H01L25/16 ,  H01L27/32 ,  H01L51/52 ,  H01L25/075

CPC classification number: H01L25/167 ,  G02F1/133603 ,  G02F1/133617 ,  G02F2001/133614 ,  G09F9/00 ,  G09G3/32 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/322 ,  H01L27/3246 ,  H01L33/38 ,  H01L33/50 ,  H01L33/501 ,  H01L33/502 ,  H01L33/504 ,  H01L33/505 ,  H01L33/507 ,  H01L33/52 ,  H01L33/54 ,  H01L33/56 ,  H01L33/58 ,  H01L51/5281 ,  H01L2924/0002 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00

Abstract: A display and method of manufacture are described. The display may include a substrate including an array of pixels with each pixel including multiple subpixels, and each subpixel within a pixel is designed for a different color emission spectrum. An array of micro LED device pairs are mounted within each subpixel to provide redundancy. An array of wavelength conversion layers comprising phosphor particles are formed over the array of micro LED device pairs for tunable color emission spectrum.

公开(公告)号：US20240153466A1

公开(公告)日：2024-05-09

申请号：US18497185

申请日：2023-10-30

Applicant: Apple Inc.

Inventor： Kapil V. Sakariya ,  Andreas Bibl ,  Kelly McGroddy

IPC: G09G3/34 ,  G09G3/20 ,  G09G3/32 ,  G09G3/3216 ,  G09G3/3233 ,  G09G3/3266 ,  H01L25/075 ,  H01L25/16

CPC classification number: G09G3/3426 ,  G09G3/2088 ,  G09G3/32 ,  G09G3/3216 ,  G09G3/3233 ,  G09G3/3266 ,  H01L25/0753 ,  H01L25/167 ,  G09G2300/0828 ,  G09G2300/0842 ,  G09G2300/0857 ,  G09G2310/027 ,  G09G2310/08 ,  G09G2320/029 ,  G09G2330/028 ,  H01L2924/0002

Abstract: A light emitting assembly is described. In one embodiment, one or more light emitting diode (LED) devices and one or more microcontrollers are bonded to a same side of a substrate, with the one or more microcontrollers to switch and drive the one or more LED devices.

公开(公告)号：US11978825B2

公开(公告)日：2024-05-07

申请号：US17388949

申请日：2021-07-29

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L23/00 ,  H01L25/075 ,  H01L27/01 ,  H01L27/15 ,  H01L33/00 ,  H01L33/06 ,  H01L33/30 ,  H01L33/42 ,  G09G3/32 ,  H01L33/16 ,  H01L33/20

CPC classification number: H01L33/145 ,  H01L24/75 ,  H01L24/95 ,  H01L25/0753 ,  H01L27/016 ,  H01L27/156 ,  H01L33/0093 ,  H01L33/06 ,  H01L33/14 ,  H01L33/30 ,  H01L33/42 ,  G09G3/32 ,  H01L33/0016 ,  H01L33/0095 ,  H01L33/16 ,  H01L33/20 ,  H01L2224/75305 ,  H01L2224/75725 ,  H01L2224/7598 ,  H01L2224/82203 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/12041 ,  H01L2924/00 ,  H01L2924/12042 ,  H01L2924/00 ,  H01L2924/12044 ,  H01L2924/00

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

公开(公告)号：US10593832B2

公开(公告)日：2020-03-17

申请号：US15223900

申请日：2016-07-29

Applicant: Apple Inc.

Inventor： Kelly McGroddy ,  Hsin-Hua Hu ,  Andreas Bibl ,  Clayton Ka Tsun Chan ,  Daniel Arthur Haeger

IPC: H01L33/14 ,  H01L27/01 ,  H01L33/06 ,  H01L23/00 ,  H01L25/075 ,  H01L27/15 ,  H01L33/00 ,  H01L33/30 ,  H01L33/42 ,  G09G3/32 ,  H01L33/16 ,  H01L33/20

Abstract: Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.