公开(公告)号：US20200312824A1

公开(公告)日：2020-10-01

申请号：US16860757

申请日：2020-04-28

Applicant: Apple Inc.

Inventor： Jonathan S. Steckel ,  Jean-Jacques P. Drolet ,  Roland Van Gelder ,  Kelly C. McGroddy ,  Ion Bita ,  James Michael Perkins ,  Andreas Bibl ,  Sajjad A. Khan ,  James E. Pedder ,  Elmar Gehlen

IPC: H01L25/075 ,  G02F1/13357 ,  H01L33/60

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

公开(公告)号：US20190371964A1

公开(公告)日：2019-12-05

申请号：US16545919

申请日：2019-08-20

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US20220293876A1

公开(公告)日：2022-09-15

申请号：US17804715

申请日：2022-05-31

Applicant: Apple Inc.

Inventor： Andreas Bibl ,  Kapil V. Sakariya ,  Charles R. Griggs ,  James Michael Perkins

IPC: H01L51/50 ,  H01L27/15 ,  G09G3/00 ,  H01L23/00 ,  H01L21/683 ,  H01L27/32

Abstract: A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

公开(公告)号：US20210257572A1

公开(公告)日：2021-08-19

申请号：US17186362

申请日：2021-02-26

Applicant: Apple Inc.

Inventor： Andreas Bibl ,  Kapil V. Sakariya ,  Charles R. Griggs ,  James Michael Perkins

IPC: H01L51/50 ,  H01L27/15 ,  G09G3/00 ,  H01L23/00 ,  H01L21/683

Abstract: A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

公开(公告)号：US09865832B2

公开(公告)日：2018-01-09

申请号：US14798298

申请日：2015-07-13

Applicant: Apple Inc.

Inventor： Andreas Bibl ,  Kapil V. Sakariya ,  Charles R. Griggs ,  James Michael Perkins

IPC: H01L27/15 ,  H01L27/12 ,  H01L51/50 ,  G09G3/00 ,  H01L23/00 ,  H01L21/683 ,  G09G3/3208

CPC classification number: H01L51/50 ,  G09G3/006 ,  G09G3/3208 ,  H01L21/6835 ,  H01L24/24 ,  H01L24/32 ,  H01L24/75 ,  H01L24/82 ,  H01L24/83 ,  H01L24/97 ,  H01L27/1214 ,  H01L27/156 ,  H01L2221/68368 ,  H01L2221/68381 ,  H01L2224/2401 ,  H01L2224/24011 ,  H01L2224/2405 ,  H01L2224/24137 ,  H01L2224/24227 ,  H01L2224/245 ,  H01L2224/29005 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29118 ,  H01L2224/29124 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32014 ,  H01L2224/32057 ,  H01L2224/32237 ,  H01L2224/32503 ,  H01L2224/75252 ,  H01L2224/75301 ,  H01L2224/7565 ,  H01L2224/75725 ,  H01L2224/759 ,  H01L2224/7598 ,  H01L2224/82101 ,  H01L2224/82102 ,  H01L2224/82104 ,  H01L2224/83 ,  H01L2224/83005 ,  H01L2224/83192 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83805 ,  H01L2224/8381 ,  H01L2224/83825 ,  H01L2224/8383 ,  H01L2224/97 ,  H01L2924/0781 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/12044 ,  H01L2924/00014 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/00012 ,  H01L2924/053 ,  H01L2924/0549 ,  H01L2924/0543 ,  H01L2924/0544 ,  H01L2924/0103 ,  H01L2924/01013 ,  H01L2924/01042 ,  H01L2924/01022 ,  H01L2924/01074 ,  H01L2924/01047 ,  H01L2924/01079 ,  H01L2924/00

Abstract: A display panel and method of manufacture are described. In an embodiment, a display substrate includes a pixel area and a non-pixel area. An array of subpixels and corresponding array of bottom electrodes are in the pixel area. An array of micro LED devices are bonded to the array of bottom electrodes. One or more top electrode layers are formed in electrical contact with the array of micro LED devices. In one embodiment a redundant pair of micro LED devices are bonded to the array of bottom electrodes. In one embodiment, the array of micro LED devices are imaged to detect irregularities.

公开(公告)号：US09601659B2

公开(公告)日：2017-03-21

申请号：US15199803

申请日：2016-06-30

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L29/06 ,  H01L31/00 ,  H01L33/06 ,  H01L33/00 ,  H01L33/30 ,  H01L33/20 ,  H01L33/24 ,  H01L33/44 ,  H01L33/56

CPC classification number: H01L33/06 ,  H01L33/0025 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/44 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US20160197232A1

公开(公告)日：2016-07-07

申请号：US14853614

申请日：2015-09-14

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet

IPC: H01L33/06 ,  H01L33/30 ,  H01L33/38

CPC classification number: H01L33/06 ,  H01L33/20 ,  H01L33/24 ,  H01L33/30 ,  H01L33/38 ,  H01L33/44 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

Abstract translation: 公开了LED结构，以减少沿着垂直LED的侧壁的非辐射侧壁复合，包括跨越顶部电流扩散层的p-n二极管侧壁，底部电流扩展层以及顶部电流扩散层和底部电流扩散层之间的有源层。

公开(公告)号：US11217567B2

公开(公告)日：2022-01-04

申请号：US16860757

申请日：2020-04-28

Applicant: Apple Inc.

Inventor： Jonathan S. Steckel ,  Jean-Jacques P. Drolet ,  Roland Van Gelder ,  Kelly C. McGroddy ,  Ion Bita ,  James Michael Perkins ,  Andreas Bibl ,  Sajjad A. Khan ,  James E. Pedder ,  Elmar Gehlen

IPC: H01L29/18 ,  H01L33/00 ,  H01L25/075 ,  G02F1/13357 ,  H01L33/60 ,  G02F1/1335 ,  H01L33/44

Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.

公开(公告)号：US10714655B2

公开(公告)日：2020-07-14

申请号：US16545919

申请日：2019-08-20

Applicant: Apple Inc.

Inventor： David P. Bour ,  Kelly McGroddy ,  Daniel Arthur Haeger ,  James Michael Perkins ,  Arpan Chakraborty ,  Jean-Jacques P. Drolet ,  Dmitry S. Sizov

IPC: H01L33/06 ,  H01L33/00 ,  H01L33/44 ,  H01L33/30 ,  H01L33/14 ,  H01L33/20 ,  H01L33/24 ,  H01L33/56

Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.

公开(公告)号：US10396241B1

公开(公告)日：2019-08-27

申请号：US15650413

申请日：2017-07-14

Applicant: Apple Inc.

Inventor： James Michael Perkins

IPC: H01L33/06 ,  H01L33/14

Abstract: LEDs and methods of fabrication are described. The LEDs may include a diffusion revealed blocking junction within a cladding layer in order to confine current within an interior of the LED, and mitigate non-radiative recombination at the LED sidewalls.