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公开(公告)号：US10591774B2
公开(公告)日：2020-03-17
申请号：US15693305
申请日：2017-08-31
Applicant: Apple Inc.
Inventor： Jean-Jacques P. Drolet , Yuan Chen , Jonathan S. Steckel , Ion Bita , Dmitry S. Sizov , Chia Hsuan Tai , John T. Leonard , Lai Wang , Ove Lyngnes , Xiaobin Xin , Zhibing Ge
IPC: G02F1/1335 , G02F1/1343 , F21V8/00 , G06F3/044 , G02F1/1368 , G02F1/1333 , G06F3/041
Abstract: A display may have display layers that form an array of pixels. The display layers may include a first layer that includes a light-blocking matrix and a second layer that overlaps the first layer. The first layer may include quantum dot elements formed in openings in the light-blocking matrix. The light-blocking matrix may be formed from a reflective material such as metal. The second layer may include color filter elements that overlap corresponding quantum dot elements in the first layer. Substrate layers may be used to support the first and second layers and to support thin-film transistor circuitry that is used in controlling light transmission through the array of pixels. The display layers may include a liquid crystal layer, polarizer layers, filter layers for reflecting red and green light and/or other light to enhance light recycling, and layers with angularly dependent transmission characteristics.
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公开(公告)号：US20190115495A1
公开(公告)日：2019-04-18
申请号：US16219897
申请日：2018-12-13
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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公开(公告)号：US20180097145A1
公开(公告)日：2018-04-05
申请号：US15828081
申请日：2017-11-30
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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公开(公告)号：US09865772B2
公开(公告)日：2018-01-09
申请号：US15444218
申请日：2017-02-27
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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公开(公告)号：US20170170360A1
公开(公告)日：2017-06-15
申请号：US15444218
申请日：2017-02-27
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
CPC classification number: H01L33/06 , H01L33/0008 , H01L33/0025 , H01L33/0062 , H01L33/145 , H01L33/20 , H01L33/24 , H01L33/305 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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Patent Agency Ranking
公开(公告)号：US20230018406A1
公开(公告)日：2023-01-19
申请号：US17809785
申请日：2022-06-29
Applicant: Apple Inc.
Inventor： Dmitry S. Sizov , Ion Bita , Jean-Jacques P. Drolet , John T. Leonard , Jonathan S. Steckel , Nathaniel T. Lawrence , Xiaobin Xin , Ranojoy Bose
IPC: H01L25/075 , H01L23/00 , H01L25/16 , H01L25/18 , H01L33/60
Abstract: Light emitting structures and methods of fabrication are described. In an embodiment, LED coupons are transferred to a carrier substrate and then patterned to LED mesa structures. Patterning may be performed on heterogeneous groups of LED coupons with a common mask set. The LED mesa structure are then transferred in bulk to a display substrate. In an embodiment, a light emitting structure includes an arrangement of LEDs with different thickness, and corresponding bottom contacts with different thicknesses bonded to a display substrate.
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公开(公告)号：US11217567B2
公开(公告)日：2022-01-04
申请号：US16860757
申请日：2020-04-28
Applicant: Apple Inc.
Inventor： Jonathan S. Steckel , Jean-Jacques P. Drolet , Roland Van Gelder , Kelly C. McGroddy , Ion Bita , James Michael Perkins , Andreas Bibl , Sajjad A. Khan , James E. Pedder , Elmar Gehlen
IPC: H01L29/18 , H01L33/00 , H01L25/075 , G02F1/13357 , H01L33/60 , G02F1/1335 , H01L33/44
Abstract: Display panels and methods of manufacture are described for down converting a peak emission wavelength of a pump LED within a subpixel with a quantum dot layer. In some embodiments, pump LEDs with a peak emission wavelength below 500 nm, such as between 340 nm and 420 nm are used. QD layers in accordance with embodiments can be integrated into a variety of display panel structures including a wavelength conversion cover arrangement, QD patch arrangement, or QD layers patterned on the display substrate.
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公开(公告)号：US10714655B2
公开(公告)日：2020-07-14
申请号：US16545919
申请日：2019-08-20
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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公开(公告)号：US10193013B2
公开(公告)日：2019-01-29
申请号：US15828081
申请日：2017-11-30
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet , Dmitry S. Sizov
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
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公开(公告)号：US09484492B2
公开(公告)日：2016-11-01
申请号：US14853614
申请日：2015-09-14
Applicant: Apple Inc.
Inventor： David P. Bour , Kelly McGroddy , Daniel Arthur Haeger , James Michael Perkins , Arpan Chakraborty , Jean-Jacques P. Drolet
CPC classification number: H01L33/06 , H01L33/20 , H01L33/24 , H01L33/30 , H01L33/38 , H01L33/44 , H01L33/56
Abstract: LED structures are disclosed to reduce non-radiative sidewall recombination along sidewalls of vertical LEDs including p-n diode sidewalls that span a top current spreading layer, bottom current spreading layer, and active layer between the top current spreading layer and bottom current spreading layer.
Abstract translation: 公开了LED结构，以减少沿着垂直LED的侧壁的非辐射侧壁复合，包括跨越顶部电流扩散层的p-n二极管侧壁，底部电流扩展层以及顶部电流扩展层和底部电流扩散层之间的有源层。
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