Invention Grant
- Patent Title: Decoupled via fill
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Application No.: US16005175Application Date: 2018-06-11
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Publication No.: US10211098B2Publication Date: 2019-02-19
- Inventor: Yuriy V. Shusterman , Flavio Griggio , Tejaswi K. Indukuri , Ruth A. Brain
- Applicant: INTEL CORPORATION
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Schwabe, Williamson & Wyatt P.C.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40 ; H01L21/768 ; H01L23/528 ; H01L21/321 ; H01L21/3213 ; H01L23/31 ; H01L23/532

Abstract:
Techniques are disclosed for providing a decoupled via fill. Given a via trench, a first barrier layer is conformally deposited onto the bottom and sidewalls of the trench. A first metal fill is blanket deposited into the trench. The non-selective deposition is subsequently recessed so that only a portion of the trench is filled with the first metal. The previously deposited first barrier layer is removed along with the first metal, thereby re-exposing the upper sidewalls of the trench. A second barrier layer is conformally deposited onto the top of the first metal and the now re-exposed trench sidewalls. A second metal fill is blanket deposited into the remaining trench. Planarization and/or etching can be carried out as needed for subsequent processing. Thus, a methodology for filling high aspect ratio vias using a dual metal process is provided. Note, however, the first and second fill metals may be the same.
Public/Granted literature
- US20180350672A1 DECOUPLED VIA FILL Public/Granted day:2018-12-06
Information query
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