Invention Grant
- Patent Title: Semiconductor device including metal-2 dimensional material-semiconductor contact
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Application No.: US15010807Application Date: 2016-01-29
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Publication No.: US10217819B2Publication Date: 2019-02-26
- Inventor: Minhyun Lee , Haeryong Kim , Hyeonjin Shin , Seunggeol Nam , Seongjun Park
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2015-0070567 20150520; KR10-2015-0110233 20150804
- Main IPC: H01L29/04
- IPC: H01L29/04 ; H01L29/78 ; H01L29/08 ; H01L21/285 ; H01L29/45 ; H01L29/06 ; H01L29/267 ; H01L29/417 ; H01L29/12 ; H01L29/26 ; H01L29/165 ; H01L29/16
Abstract:
A semiconductor device includes a semiconductor layer, a metal layer electrically contacting the semiconductor layer, and a two-dimensional material layer between the semiconductor layer and the metal layer and having a two-dimensional crystal structure.
Public/Granted literature
- US20160343805A1 SEMICONDUCTOR DEVICE INCLUDING METAL-2 DIMENSIONAL MATERIAL-SEMICONDUCTOR CONTACT Public/Granted day:2016-11-24
Information query
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