Invention Grant
- Patent Title: Three-dimensional ReRAM memory device employing replacement word lines and methods of making the same
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Application No.: US15635321Application Date: 2017-06-28
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Publication No.: US10224373B2Publication Date: 2019-03-05
- Inventor: Jongsun Sel , Mitsuteru Mushiga , Vincent Shih , Akio Nishida , Tuan Pham
- Applicant: SANDISK TECHNOLOGIES LLC
- Applicant Address: US TX Addison
- Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee: SANDISK TECHNOLOGIES LLC
- Current Assignee Address: US TX Addison
- Agency: The Marbury Law Group PLLC
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L27/24 ; H01L45/00 ; H01L23/522 ; H01L23/528

Abstract:
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, resistive memory elements located in the alternating stack in first and second array regions and contact via structures located in a contact region between the first and the second array regions. The contact via structures have different depths and contact different electrically conductive layers. Support pillars are located in the contact region and extending through the alternating stack. At least one conduction channel area is located between the contact via structures in the contact region. The conduction channel area contains no support pillars, and all electrically conductive layers in the conduction channel area are continuous from the first array region to the second array region.
Public/Granted literature
- US20190006418A1 THREE-DIMENSIONAL RERAM MEMORY DEVICE EMPLOYING REPLACEMENT WORD LINES AND METHODS OF MAKING THE SAME Public/Granted day:2019-01-03
Information query
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