- 专利标题： Integration of gate structures and spacers with air gaps
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申请号： US15784445申请日： 2017-10-16
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公开(公告)号： US10236358B1公开(公告)日： 2019-03-19
- 发明人: Suraj K. Patil , Jagar Singh
- 申请人： GLOBALFOUNDRIES Inc.
- 申请人地址： KY Grand Cayman
- 专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人： GLOBALFOUNDRIES Inc.
- 当前专利权人地址： KY Grand Cayman
- 代理机构： Thompson Hine LLP
- 代理商 Anthony Canale
- 主分类号： H01L29/49
- IPC分类号： H01L29/49 ; H01L29/51 ; H01L29/78 ; H01L29/417 ; H01L29/66 ; H01L21/28 ; H01L29/08 ; H01L21/311 ; H01L21/02
摘要：
Structures for a field-effect transistor and methods for forming a field-effect transistor. The structure includes a gate structure having a sidewall and a sidewall spacer arranged adjacent to the sidewall of the gate structure. The sidewall spacer includes an energy removal film material and one or more air gaps in the energy removal film material.
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