Invention Grant
- Patent Title: Memory leakage power savings
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Application No.: US15690197Application Date: 2017-08-29
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Publication No.: US10248558B2Publication Date: 2019-04-02
- Inventor: Bharat Kumar Rangarajan , Rakesh Misra
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Qualcomm Incorporated
- Main IPC: G06F3/06
- IPC: G06F3/06 ; G06F12/08 ; G06F1/32 ; G06F12/02 ; G06F1/3206 ; G06F1/3234 ; G06F11/36 ; H02H3/32

Abstract:
In some aspects, a method for managing leakage power includes coupling a first supply rail to a cache memory if a processor is in a first performance mode, wherein the processor accesses the cache memory, and coupling a second supply rail to the cache memory if the processor is in a second performance mode. The method also includes detecting gating of a clock signal to the cache memory or the processor, and, upon detecting gating of the clock signal, switching the cache memory from the second supply rail to the first supply rail if the cache memory is currently coupled to the second supply rail.
Public/Granted literature
- US20190065359A1 MEMORY LEAKAGE POWER SAVINGS Public/Granted day:2019-02-28
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