Memory leakage power savings
    1.
    发明授权

    公开(公告)号:US10248558B2

    公开(公告)日:2019-04-02

    申请号:US15690197

    申请日:2017-08-29

    Abstract: In some aspects, a method for managing leakage power includes coupling a first supply rail to a cache memory if a processor is in a first performance mode, wherein the processor accesses the cache memory, and coupling a second supply rail to the cache memory if the processor is in a second performance mode. The method also includes detecting gating of a clock signal to the cache memory or the processor, and, upon detecting gating of the clock signal, switching the cache memory from the second supply rail to the first supply rail if the cache memory is currently coupled to the second supply rail.

    MEMORY LEAKAGE POWER SAVINGS
    2.
    发明申请

    公开(公告)号:US20190065359A1

    公开(公告)日:2019-02-28

    申请号:US15690197

    申请日:2017-08-29

    Abstract: In some aspects, a method for managing leakage power includes coupling a first supply rail to a cache memory if a processor is in a first performance mode, wherein the processor accesses the cache memory, and coupling a second supply rail to the cache memory if the processor is in a second performance mode. The method also includes detecting gating of a clock signal to the cache memory or the processor, and, upon detecting gating of the clock signal, switching the cache memory from the second supply rail to the first supply rail if the cache memory is currently coupled to the second supply rail.

    Asymmetric memory tag access and design

    公开(公告)号:US10831667B2

    公开(公告)日:2020-11-10

    申请号:US16173221

    申请日:2018-10-29

    Abstract: Various aspects are described herein. In some aspects, the disclosure provides techniques for accessing tag information in a memory line. The techniques include determining an operation to perform on at least one memory line of a memory. The techniques further include performing the operation by accessing only a portion of the at least one memory line, wherein the only the portion of the at least one memory line comprises one or more flag bits that are independently accessible from remaining bits of the at least one memory line.

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