Invention Grant
- Patent Title: Multi channel semiconductor device having multi dies and operation method thereof
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Application No.: US16032837Application Date: 2018-07-11
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Publication No.: US10255969B2Publication Date: 2019-04-09
- Inventor: Yoon-Joo Eom , Joon-Young Park , Yongcheol Bae , Won Young Lee , Seongjin Jang , Junghwan Choi , Joosun Choi
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2014-0086188 20140709
- Main IPC: G11C5/06
- IPC: G11C5/06 ; G11C11/4096 ; G11C11/4093 ; G11C7/10

Abstract:
A multi channel semiconductor device is disclosed. The multi channel device may include a substrate, a first die on the substrate and having a first channel to function as a first chip; and a second die on the substrate and having a second channel different from the first channel to function as a second chip and including the same storage capacity and physical size as the first die. An internal interface is disposed between the first and second dies. The internal interface is configured to transmit information for controlling internal operations of the first and second dies and first applied to a first recipient die of the first and second dies to the other die.
Public/Granted literature
- US20180315468A1 MULTI CHANNEL SEMICONDUCTOR DEVICE HAVING MULTI DIES AND OPERATION METHOD THEREOF Public/Granted day:2018-11-01
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