Invention Grant
- Patent Title: Substrate processing method
-
Application No.: US15441054Application Date: 2017-02-23
-
Publication No.: US10256107B2Publication Date: 2019-04-09
- Inventor: Muneyuki Imai , Satoshi Toda
- Applicant: TOKYO ELECTRON LIMITED
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Priority: JP2016-033294 20160224
- Main IPC: H01L21/3205
- IPC: H01L21/3205 ; H01L21/3105 ; H01L21/311 ; H01L21/762 ; H01J37/32 ; H01L21/67 ; H01L21/677 ; H01L21/687
Abstract:
There is disclosed a substrate processing method for etching a substrate on which a first and a second silicon oxide layer having different film qualities are formed side by side. The substrate processing method includes: a first etching step of supplying a halogen-containing gas that is not activated to the substrate and sublimating reaction by-products generated by reaction between the halogen-containing gas and the first and the second silicon oxide layer; and a second etching step of etching the substrate by radicals generated by activating the halogen-containing gas.
Public/Granted literature
- US20170243753A1 SUBSTRATE PROCESSING METHOD Public/Granted day:2017-08-24
Information query
IPC分类:
