- 专利标题: Resistive memory accelerator
-
申请号: US15587024申请日: 2017-05-04
-
公开(公告)号: US10261977B2公开(公告)日: 2019-04-16
- 发明人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
- 申请人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
- 申请人地址: US NY Rochester
- 专利权人: University of Rochester
- 当前专利权人: University of Rochester
- 当前专利权人地址: US NY Rochester
- 代理机构: Harter Secrest & Emery LLP
- 代理商 Timothy W. Menasco, Esq.
- 主分类号: G11C11/00
- IPC分类号: G11C11/00 ; G06F17/16 ; G06F3/06 ; G06F17/11 ; G11C7/10 ; G11C11/16 ; G11C13/00
摘要:
A method includes receiving, by a resistive memory array, a first data, the resistive memory array comprising a plurality of cells, wherein the receiving comprises setting a plurality of resistances on the plurality of cells, wherein each of the plurality of resistances are based on the first data. The method further includes receiving, by the resistive memory array, a second data, wherein the receiving comprises applying at least one of a current and a voltage based on the second data on the plurality of cells. The method still further includes determining, by the resistive memory array, an initial unknown value, the initial value based on the first data and the second data.
公开/授权文献
- US20180322094A1 RESISTIVE MEMORY ACCELERATOR 公开/授权日:2018-11-08
信息查询