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公开(公告)号:US10297315B2
公开(公告)日:2019-05-21
申请号:US15657288
申请日:2017-07-24
申请人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
发明人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
摘要: Presented is a method and apparatus for solving. The method includes receiving, by a resistive memory array, a first data, the resistive memory array comprising a plurality of cells, wherein the receiving comprises setting a plurality of resistances on the plurality of cells, wherein each of the plurality of resistances are based on the first data. The method further includes receiving, by the resistive memory array, a second data, wherein the receiving comprises applying at least one of a current and a voltage based on the second data on the plurality of cells. The method still further includes determining, by the resistive memory array, an initial unknown value, the initial value based on the first data and the second data.
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公开(公告)号:US20180068722A1
公开(公告)日:2018-03-08
申请号:US15801372
申请日:2017-11-02
申请人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
发明人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
CPC分类号: G11C13/004 , G11C7/16 , G11C13/0002 , G11C13/0069
摘要: Presented is a method and apparatus for solving. The method includes receiving, by a resistive memory array, a first data, the resistive memory array comprising a plurality of cells, wherein the receiving comprises setting a plurality of resistances on the plurality of cells, wherein each of the plurality of resistances are based on the first data. The method further includes receiving, by the resistive memory array, a second data, wherein the receiving comprises applying at least one of a current and a voltage based on the second data on the plurality of cells. The method still further includes determining, by the resistive memory array, an initial unknown value, the initial value based on the first data and the second data.
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公开(公告)号:US10447277B1
公开(公告)日:2019-10-15
申请号:US16120920
申请日:2018-09-04
申请人: Mohammad Kazemi
发明人: Mohammad Kazemi
摘要: An integrated logic device includes a channel having an interconnect section and a pair of spin-orbit segments connected to the interconnect section at either end of the interconnect section. A P structure includes a P magnet disposed on a surface of a spin-orbit segment. A tunneling barrier is disposed between the P magnet and a Rp magnetic reference layer. A Q structure includes a Q magnet disposed on a surface of the other spin-orbit segment. A tunneling barrier is disposed between the Q magnet and a Rq magnetic reference layer. A method of integrated logic spin-orbit perpendicular-anisotropy (SOPE) gate device operation is also described.
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公开(公告)号:US09847125B2
公开(公告)日:2017-12-19
申请号:US15229818
申请日:2016-08-05
申请人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
发明人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
CPC分类号: G11C13/004 , G11C7/16 , G11C13/0002 , G11C13/0069
摘要: Presented is a method and apparatus for solving. The method includes receiving, by a resistive memory array, a first data, the resistive memory array comprising a plurality of cells, wherein the receiving comprises setting a plurality of resistances on the plurality of cells, wherein each of the plurality of resistances are based on the first data. The method further includes receiving, by the resistive memory array, a second data, wherein the receiving comprises applying at least one of a current and a voltage based on the second data on the plurality of cells. The method still further includes determining, by the resistive memory array, an initial unknown value, the initial value based on the first data and the second data.
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公开(公告)号:US20100269365A1
公开(公告)日:2010-10-28
申请号:US12756161
申请日:2010-04-07
申请人: Kenneth C. Miller , Mohammad Kazemi
发明人: Kenneth C. Miller , Mohammad Kazemi
CPC分类号: F26B21/022 , B05D1/18 , B05D3/0272 , H01L21/67034 , H01L21/6719 , Y10T137/0318 , Y10T137/87249
摘要: A chamber optimized for drying a substrate is provided. The chamber includes opposing sidewalls having fluid channels extending therethrough. The fluid channels deliver a fluid to interior inlet ports of the chamber. Outlet ports positioned below corresponding interior inlet ports are in communication with a vacuum source in one embodiment. A loop flow path extending into the interior of the chamber from opposing sides is provided. The loop flow path is swept across the interior of the chamber by alternating the fluid flow from the inlet ports or outlet ports.
摘要翻译: 提供了优化用于干燥基底的腔室。 腔室包括具有延伸穿过其中的流体通道的相对侧壁。 流体通道将流体输送到腔室的内部入口端口。 在一个实施例中,位于相应的内部入口端口下方的出口端口与真空源连通。 提供从相对侧延伸到腔室内部的环流路径。 通过交替来自入口端口或出口的流体流,环路流动通过腔室的内部扫过。
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公开(公告)号:US10510474B2
公开(公告)日:2019-12-17
申请号:US15572017
申请日:2016-04-18
申请人: Mohammad Kazemi , Engin Ipek , Eby G. Friedman
发明人: Mohammad Kazemi , Engin Ipek , Eby G. Friedman
摘要: A base element for switching a magnetization state of a nanomagnet includes a heavy-metal strip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable in an absence of an external magnetic field by a flow of electrical charge through the heavy-metal strip. A method for switching a magnetization state of a nanomagnet is also described.
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公开(公告)号:US10261977B2
公开(公告)日:2019-04-16
申请号:US15587024
申请日:2017-05-04
申请人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
发明人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
摘要: A method includes receiving, by a resistive memory array, a first data, the resistive memory array comprising a plurality of cells, wherein the receiving comprises setting a plurality of resistances on the plurality of cells, wherein each of the plurality of resistances are based on the first data. The method further includes receiving, by the resistive memory array, a second data, wherein the receiving comprises applying at least one of a current and a voltage based on the second data on the plurality of cells. The method still further includes determining, by the resistive memory array, an initial unknown value, the initial value based on the first data and the second data.
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8.
公开(公告)号:US20180350498A1
公开(公告)日:2018-12-06
申请号:US15572017
申请日:2016-04-18
申请人: Mohammad Kazemi , Engin Ipek , Eby G. Friedman
发明人: Mohammad Kazemi , Engin Ipek , Eby G. Friedman
CPC分类号: H01F10/3286 , G11C11/161 , G11C11/1675 , G11C11/18 , H01F10/329 , H01L43/00 , H01L43/065 , H01L43/10 , H03K19/18
摘要: A base element for switching a magnetization state of a nanomagnet includes a heavy-metal strip having a surface. A ferromagnetic nanomagnet is disposed adjacent to the surface. The ferromagnetic nanomagnet has a first magnetization equilibrium state and a second magnetization equilibrium state. The first magnetization equilibrium state or the second magnetization equilibrium state is settable in an absence of an external magnetic field by a flow of electrical charge through the heavy-metal strip. A method for switching a magnetization state of a nanomagnet is also described.
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公开(公告)号:US20180322094A1
公开(公告)日:2018-11-08
申请号:US15587024
申请日:2017-05-04
申请人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
发明人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
CPC分类号: G06F17/16 , G06F3/0604 , G06F3/0659 , G06F3/0679 , G06F17/11 , G11C7/1006 , G11C11/161 , G11C13/0004 , G11C13/0007
摘要: Presented is a method and apparatus for solving. The method includes receiving, by a resistive memory array, a first data, the resistive memory array comprising a plurality of cells, wherein the receiving comprises setting a plurality of resistances on the plurality of cells, wherein each of the plurality of resistances are based on the first data. The method further includes receiving, by the resistive memory array, a second data, wherein the receiving comprises applying at least one of a current and a voltage based on the second data on the plurality of cells. The method still further includes determining, by the resistive memory array, an initial unknown value, the initial value based on the first data and the second data.
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公开(公告)号:US20170330617A1
公开(公告)日:2017-11-16
申请号:US15657288
申请日:2017-07-24
申请人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
发明人: Eby Friedman , Isaac Richter , Xiaochen Guo , Mohammad Kazemi , Kamil Pas , Ravi Patel , Engin Ipek , Ji Liu
CPC分类号: G11C13/004 , G11C7/16 , G11C13/0002 , G11C13/0069
摘要: Presented is a method and apparatus for solving. The method includes receiving, by a resistive memory array, a first data, the resistive memory array comprising a plurality of cells, wherein the receiving comprises setting a plurality of resistances on the plurality of cells, wherein each of the plurality of resistances are based on the first data. The method further includes receiving, by the resistive memory array, a second data, wherein the receiving comprises applying at least one of a current and a voltage based on the second data on the plurality of cells. The method still further includes determining, by the resistive memory array, an initial unknown value, the initial value based on the first data and the second data.
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