Invention Grant
- Patent Title: Semiconductor devices and methods of forming thereof
-
Application No.: US15295631Application Date: 2016-10-17
-
Publication No.: US10262959B2Publication Date: 2019-04-16
- Inventor: Evelyn Napetschnig , Ulrike Fastner , Alexander Heinrich , Thomas Fischer
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L21/78 ; H01L21/308 ; H01L21/683 ; H01L21/268 ; H01L21/304 ; H01L23/31
Abstract:
In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a contact layer over a first major surface of a substrate. The substrate includes device regions separated by kerf regions. The contact layer is disposed in the kerf region and the device regions. A structured solder layer is formed over the device regions. The contact layer is exposed at the kerf region after forming the structured solder layer. The contact layer and the substrate in the kerf regions are diced.
Public/Granted literature
- US20170033066A1 Semiconductor Devices and Methods of Forming Thereof Public/Granted day:2017-02-02
Information query
IPC分类:
