- 专利标题： Strain assisted spin torque switching spin transfer torque memory
-
申请号： US15508430申请日： 2014-09-25
-
公开(公告)号： US10263036B2公开(公告)日： 2019-04-16
- 发明人: Sasikanth Manipatruni , Dmitri E. Nikonov , Asif Khan , Raseong Kim , Tahir Ghani , Ian A. Young
- 申请人： Intel Corporation
- 申请人地址： US CA Santa Clara
- 专利权人： Intel Corporation
- 当前专利权人： Intel Corporation
- 当前专利权人地址： US CA Santa Clara
- 代理机构： Green, Howard & Mughal LLP
- 国际申请： PCT/US2014/057356 WO 20140925
- 国际公布： WO2016/048317 WO 20160331
- 主分类号： H01L29/82
- IPC分类号： H01L29/82 ; H01L27/22 ; G11C11/16 ; H01L43/02 ; H01L43/08 ; H01L27/20 ; H01L41/20 ; H01L43/10 ; H01L27/11507 ; H01L27/11502 ; H01L49/02
摘要：
Described is an apparatus which comprises: a magnetic tunneling junction (MTJ) having a free magnetic layer; a piezoelectric layer; and a conducting strain transfer layer coupled to the free magnetic layer and the piezoelectric layer. Described is a method, which comprises: exciting a piezoelectric layer with a voltage driven capacitive stimulus; and writing to a MTJ coupled to the piezoelectric layer via a strain assist layer. Described is also an apparatus which comprises: a transistor; a conductive strain transfer layer coupled to the transistor; and a MTJ device having a free magnetic layer coupled to the conductive strain transfer layer.
公开/授权文献
信息查询
IPC分类:
