Invention Grant
- Patent Title: Semiconductor device and measuring method
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Application No.: US15796995Application Date: 2017-10-30
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Publication No.: US10267834B2Publication Date: 2019-04-23
- Inventor: Makoto Shuto , Kazuyoshi Kawai , Mitsuya Fukazawa , Robert Nolf , Robert Dalby
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2016-226397 20161122
- Main IPC: G01R21/133
- IPC: G01R21/133 ; G01R19/252 ; H03G3/20 ; H03H17/06 ; H03M1/38 ; H03M3/00 ; H03M1/12

Abstract:
There is a need for high-order frequency measurement without greatly increasing consumption currents and chip die sizes. A semiconductor device includes: an electric power measuring portion that performs electric power measurement; a high-order frequency measuring portion that performs high-order frequency measurement; and a clock controller that supplies an electric power measuring portion with a first clock signal at a first sampling frequency and supplies a high-order frequency measuring portion with a second clock signal at a second sampling frequency. The second sampling frequency is higher than the first sampling frequency.
Public/Granted literature
- US20180143229A1 SEMICONDUCTOR DEVICE AND MEASURING METHOD Public/Granted day:2018-05-24
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