公开(公告)号：US10267834B2

公开(公告)日：2019-04-23

申请号：US15796995

申请日：2017-10-30

申请人： Renesas Electronics Corporation

发明人： Makoto Shuto ,  Kazuyoshi Kawai ,  Mitsuya Fukazawa ,  Robert Nolf ,  Robert Dalby

IPC分类号： G01R21/133 ,  G01R19/252 ,  H03G3/20 ,  H03H17/06 ,  H03M1/38 ,  H03M3/00 ,  H03M1/12

摘要： There is a need for high-order frequency measurement without greatly increasing consumption currents and chip die sizes. A semiconductor device includes: an electric power measuring portion that performs electric power measurement; a high-order frequency measuring portion that performs high-order frequency measurement; and a clock controller that supplies an electric power measuring portion with a first clock signal at a first sampling frequency and supplies a high-order frequency measuring portion with a second clock signal at a second sampling frequency. The second sampling frequency is higher than the first sampling frequency.