Invention Grant
- Patent Title: Microelectromechanical sensor device with reduced stress sensitivity
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Application No.: US15182317Application Date: 2016-06-14
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Publication No.: US10274512B2Publication Date: 2019-04-30
- Inventor: Alessandro Tocchio , Francesco Rizzini , Luca Guerinoni
- Applicant: STMICROELECTRONICS S.R.L.
- Applicant Address: IT Agrate Brianza
- Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee: STMICROELECTRONICS S.R.L.
- Current Assignee Address: IT Agrate Brianza
- Agency: Seed IP Law Group LLP
- Priority: IT102015000061683 20151014
- Main IPC: B81B3/00
- IPC: B81B3/00 ; G01P1/00 ; G01P15/125 ; G01C19/5755 ; G01P15/08

Abstract:
A MEMS sensor device provided with a sensing structure, having: a substrate with a top surface extending in a horizontal plane; an inertial mass, suspended over the substrate; elastic coupling elements, elastically connected to the inertial mass so as to enable inertial movement thereof with respect to the substrate as a function of a quantity to be detected along a sensing axis belonging to the horizontal plane; and sensing electrodes, capacitively coupled to the inertial mass so as to form at least one sensing capacitor, a value of capacitance of which is indicative of the quantity to be detected. The sensing structure moreover has a suspension structure, to which the sensing electrodes are rigidly coupled, and to which the inertial mass is elastically coupled through the elastic coupling elements; the suspension structure is connected to an anchorage structure, fixed with respect to the substrate, by means of elastic suspension elements.
Public/Granted literature
- US20170108530A1 MICROELECTROMECHANICAL SENSOR DEVICE WITH REDUCED STRESS SENSITIVITY Public/Granted day:2017-04-20
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