Invention Grant
- Patent Title: Method of manufacturing a semiconductor device
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Application No.: US15490976Application Date: 2017-04-19
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Publication No.: US10276373B2Publication Date: 2019-04-30
- Inventor: Yong Chul Jeong , Tae Kyu Lee , Sung Sik Park , Joon Soo Park , Kwang Sub Yoon , Boo Hyun Ham
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2016-0128351 20161005
- Main IPC: H01L21/027
- IPC: H01L21/027 ; G03F7/09 ; G03F7/075 ; G03F7/42 ; H01L21/311 ; H01L21/266 ; H01L21/768 ; H01L21/8234
Abstract:
A method for manufacturing a semiconductor device includes forming an etch target layer on a semiconductor substrate, forming a first photoresist pattern disposed on the etch target layer, irradiating ultraviolet (UV) light in an oxygen-containing atmosphere to remove the first photoresist pattern from the etch target layer, and forming a second photoresist pattern on the etch target layer.
Public/Granted literature
- US20180096840A1 METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE Public/Granted day:2018-04-05
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