Invention Grant
- Patent Title: Delay-locked loop circuit and semiconductor memory device including the same
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Application No.: US15812420Application Date: 2017-11-14
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Publication No.: US10283176B2Publication Date: 2019-05-07
- Inventor: Hun-dae Choi , Young-kwon Jo
- Applicant: Samsung Electronics Co., Ltd.
- Applicant Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Samsung-ro, Yeongtong-gu, Suwon-si, Gyeonggi-do
- Agency: Muir Patent Law, PLLC
- Priority: KR10-2015-0150271 20151028
- Main IPC: G11C8/18
- IPC: G11C8/18 ; G11C7/00 ; G11C8/00 ; G11C7/22 ; G11C11/4076 ; H03K5/14 ; H03L7/081 ; G11C7/10 ; G11C11/4093 ; G11C29/02 ; H03K5/00

Abstract:
Provided is a delay-locked loop circuit for providing a delay-locked clock signal to a data output buffer, the delay-locked loop circuit including: a first delay-locked-mode-based selector configured to select, as a first selected clock signal, one of a first divided clock signal, which is obtained by dividing a reference clock signal by N, and the reference clock signal; and a delay-locked mode controller configured to determine a delay-locked mode on the basis of a command received from the outside and to control the first delay-locked-mode-based selector according to the delay-locked mode. The delay-locked clock signal is generated by comparing a phase of a feedback clock signal generated from the first selected clock signal with a phase of the reference clock signal.
Public/Granted literature
- US20180068699A1 DELAY-LOCKED LOOP CIRCUIT AND SEMICONDUCTOR MEMORY DEVICE INCLUDING THE SAME Public/Granted day:2018-03-08
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