A semiconductor device includes a plurality of line patterns formed apart from one another on a substrate, the plurality of line patterns having a first width and extending parallel to one another in a first direction. A first line pattern of the plurality of line patterns may include a wider portion having a second width in a second direction perpendicular to the first direction that is greater than the first width. One or more second line patterns may be located adjacent to the first line pattern and include a conformal portion conformally formed about the wider portion of the first line pattern. One or more third line patterns may be located adjacent to the second line pattern and include an end portion near the conformal portion of the one or more second line pattern.