Invention Grant
- Patent Title: Power amplification module
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Application No.: US15717161Application Date: 2017-09-27
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Publication No.: US10284150B2Publication Date: 2019-05-07
- Inventor: Kazuo Watanabe , Satoshi Tanaka , Kazuhito Nakai , Takayuki Tsutsui
- Applicant: Murata Manufacturing Co., Ltd.
- Applicant Address: JP Kyoto
- Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee: MURATA MANUFACTURING CO., LTD.
- Current Assignee Address: JP Kyoto
- Agency: Pearne & Gordon LLP
- Priority: JP2015-232136 20151127
- Main IPC: H03F3/04
- IPC: H03F3/04 ; H03F1/32 ; H03F3/19 ; H03F3/21 ; H04B1/04 ; H03F1/02 ; H03F1/30 ; H03F3/24

Abstract:
A power amplification module includes: a first transistor that amplifies a first radio frequency signal and outputs a second radio frequency signal; a second transistor that amplifies the second radio frequency signal and outputs a third radio frequency signal; and first and second bias circuits that supply first and second bias currents to bases of the first and second transistors. The first bias circuit includes a third transistor that outputs the first bias current from its emitter or source, a capacitor that is input with the first radio frequency signal and connected to the base of the first transistor, a first resistor connected between the emitter or source of the third transistor and the base of the first transistor, a second resistor connected between the capacitor and the emitter or source of the third transistor, and a third resistor connected between the capacitor and the base of the first transistor.
Public/Granted literature
- US20180019713A1 POWER AMPLIFICATION MODULE Public/Granted day:2018-01-18
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