Invention Grant
- Patent Title: Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer
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Application No.: US15872900Application Date: 2018-01-16
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Publication No.: US10290769B2Publication Date: 2019-05-14
- Inventor: Mi Hee Lee , Chang Yeon Kim , Ju Yong Park , Jong Kyun You , Joon Hee Lee
- Applicant: SEOUL VIOSYS CO., LTD.
- Applicant Address: KR Ansan-si
- Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee: SEOUL VIOSYS CO., LTD.
- Current Assignee Address: KR Ansan-si
- Agency: Perkins Coie LLP
- Priority: KR10-2017-0007138 20170116; KR10-2017-0144872 20171101; KR10-2018-0004980 20180115
- Main IPC: H01L27/32
- IPC: H01L27/32 ; H01L33/20 ; H01L33/32 ; H01L33/10

Abstract:
A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.
Public/Granted literature
- US20190044027A1 VERTICAL TYPE LIGHT EMITTING DIODE Public/Granted day:2019-02-07
Information query
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