中科微点-全球专利检索

  1. Login
  2. Sign Up

Search Results

18 records (took 0.02 seconds)

    High efficiency light emitting diode and method of fabricating the same
    3.
    发明授权
    High efficiency light emitting diode and method of fabricating the same 有权

    公开(公告)号：US10249797B2

    公开(公告)日：2019-04-02

    申请号：US14694651

    申请日：2015-04-23

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Chang Yeon Kim ,  Da Hye Kim ,  Hong Chul Lim ,  Joon Hee Lee ,  Jong Kyun You

    IPC: H01L33/38 ,  H01L33/46 ,  H01L33/20 ,  H01L33/32 ,  H01L33/40 ,  H01L33/00 ,  H01L33/22

    Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

    HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME
    4.
    发明申请
    HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME 审中-公开
    高效发光二极管及其制造方法

    公开(公告)号：US20140209952A1

    公开(公告)日：2014-07-31

    申请号：US14229713

    申请日：2014-03-28

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Kyung Hee YE ,  Chang Youn Kim ,  Jin Cheol Shin ,  Joon Hee Lee ,  Jong Kyun You ,  Hong Chol Lim

    IPC: H01L33/46 ,  H01L33/24 ,  H01L33/42

    CPC classification number: H01L33/46 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/24 ,  H01L33/387 ,  H01L33/42 ,  H01L33/44

    Abstract: A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer.

    Abstract translation: 一种高效率发光二极管，包括：位于支撑基板上的半导体堆叠，包括p型化合物半导体层，有源层和n型化合物半导体层; 设置在分隔所述p型化合物半导体层和有源层的开口中的绝缘层; 设置在绝缘层和p型化合物半导体层上的透明电极层; 覆盖所述透明电极层的反射绝缘层，以将来自所述有源层的光反射离开所述支撑基板; 覆盖反射绝缘层的p电极; 并且在n型化合物半导体层的顶部上形成n电极。 p电极通过绝缘层与透明电极层电连接。

    Light-emitting device with improved light extraction efficiency
    5.
    发明授权
    Light-emitting device with improved light extraction efficiency 有权

    公开(公告)号：US10326050B2

    公开(公告)日：2019-06-18

    申请号：US15551575

    申请日：2016-01-28

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Jong Min Jang ,  Jong Kyun You ,  Da Hye Kim ,  Chae Hon Kim ,  Seon Min Bae ,  Jae Hee Lim

    IPC: H01L33/10 ,  H01L33/22 ,  H01L33/38 ,  H01L33/32 ,  H01L33/40 ,  H01L33/16 ,  H01L33/42 ,  H01L33/00 ,  H01L33/20

    Abstract: Disclosed is a light-emitting device. The light-emitting device comprises: a light-emitting structure comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first contact electrode which ohmically contacts the first conductive semiconductor layer; a second contact electrode which is disposed on the second conductive semiconductor layer; and an insulation layer which is disposed on the light-emitting structure and insulates the first contact electrode and the second contact electrode, wherein the light-emitting structure has a non-polar or semi-polar growth surface; the upper surface of the second conductive semiconductor layer comprises a non-polar or semi-polar surface; and the second contact electrode comprises a conductive oxide layer which ohmically contacts the second conductive semiconductor layer, and a reflective electrode layer disposed on the conductive oxide layer.

    VERTICAL TYPE LIGHT EMITTING DIODE
    6.
    发明申请
    VERTICAL TYPE LIGHT EMITTING DIODE 审中-公开

    公开(公告)号：US20190044027A1

    公开(公告)日：2019-02-07

    申请号：US15872900

    申请日：2018-01-16

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Mi Hee Lee ,  Chang Yeon Kim ,  Ju Yong Park ,  Jong Kyun You ,  Joon Hee Lee

    IPC: H01L33/20 ,  H01L33/10 ,  H01L33/32

    Abstract: Disclosed herein is a vertical type light emitting diode having a mesa including a groove. The light emitting diode includes: a support substrate; a first conductivity type semiconductor layer disposed on the support substrate; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer through the second conductivity type semiconductor layer and the active layer; a first electrode disposed between the second conductivity type semiconductor layer and the support substrate and including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

    Light emitting diode and manufacturing method thereof
    7.
    发明授权
    Light emitting diode and manufacturing method thereof 有权

    公开(公告)号：US10134956B2

    公开(公告)日：2018-11-20

    申请号：US15503963

    申请日：2015-08-24

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Jong Kyun You ,  Da Hye Kim ,  Chang Ik Kim

    IPC: H01L33/60 ,  H01L33/62 ,  H01L33/20 ,  H01L33/38 ,  H01L33/40 ,  H01L33/00 ,  H01L33/16 ,  H01L33/44 ,  H01L33/48 ,  H01L33/54 ,  H01L33/22

    Abstract: A light emitting diode includes a support substrate; a light emitting structure including a second semiconductor layer, an active layer, and a first semiconductor layer; at least one groove formed on the lower surface of the light emitting structure; a second electrode located on at least the lower surface of the second semiconductor layer, and electrically connected with the second semiconductor layer; an insulating layer partially covering the second electrode and the lower surface of the light emitting structure, and including at least one opening corresponding to the at least one groove; and a first electrode electrically connected to the first semiconductor layer exposed to the at least one groove, and at least partially covering the insulating layer, wherein the second electrode includes a second contact layer including an ohmic contact layer, and the ohmic contact layer is disposed in the shape of a plurality of islands.

    HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME
    9.
    发明申请
    HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME 审中-公开
    高效发光二极管及其制造方法

    公开(公告)号：US20150243847A1

    公开(公告)日：2015-08-27

    申请号：US14694651

    申请日：2015-04-23

    Applicant: Seoul Viosys Co., Ltd.

    Inventor： Chang Yeon KIM ,  Da Hye Kim ,  Hong Chul Lim ,  Joon Hee Lee ,  Jong Kyun You

    IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/32

    CPC classification number: H01L33/382 ,  H01L33/007 ,  H01L33/0079 ,  H01L33/20 ,  H01L33/22 ,  H01L33/32 ,  H01L33/38 ,  H01L33/40 ,  H01L33/405 ,  H01L33/46 ,  H01L2224/48463 ,  H01L2224/73265

    Abstract: Exemplary embodiments of the present invention relate to a high-efficiency light emitting diode (LED). The LED according to an exemplary embodiment includes a substrate, a semiconductor stack arranged on the substrate, wherein the semiconductor stack has a p-type semiconductor layer, an active layer and an n-type semiconductor layer, a first metal layer interposed between the substrate and the semiconductor stack, the first metal layer ohmic-contacted with the semiconductor stack, a first electrode pad arranged on the semiconductor stack, an electrode extension extending from the first electrode pad, wherein the electrode extension has a contact region contacting the n-type semiconductor layer, a first insulating layer interposed between the substrate and the semiconductor stack, wherein the first insulating layer covers a surface region of the p-type semiconductor layer under the contact region of the electrode extension, and a second insulating layer interposed between the first electrode pad and the semiconductor stack.

    Abstract translation: 本发明的示例性实施例涉及一种高效率发光二极管（LED）。 根据示例性实施例的LED包括衬底，布置在衬底上的半导体堆叠，其中半导体堆叠具有p型半导体层，有源层和n型半导体层，插入在衬底之间的第一金属层 半导体堆叠，与半导体堆叠欧姆接触的第一金属层，布置在半导体堆叠上的第一电极焊盘，从第一电极焊盘延伸的电极延伸部，其中电极延伸部具有接触n型 半导体层，插入在所述基板和所述半导体堆叠之间的第一绝缘层，其中所述第一绝缘层覆盖所述电极延伸部的接触区域下方的所述p型半导体层的表面区域，以及插入在所述第一绝缘层之间的第二绝缘层 电极焊盘和半导体堆叠。

    Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer
    10.
    发明授权
    Vertical type light emitting diode having groove disposed under the first conductivity type semiconductor layer 有权

    公开(公告)号：US10290769B2

    公开(公告)日：2019-05-14

    申请号：US15872900

    申请日：2018-01-16

    Applicant: SEOUL VIOSYS CO., LTD.

    Inventor： Mi Hee Lee ,  Chang Yeon Kim ,  Ju Yong Park ,  Jong Kyun You ,  Joon Hee Lee

    IPC: H01L27/32 ,  H01L33/20 ,  H01L33/32 ,  H01L33/10

    Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.

Patent Agency Ranking