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公开(公告)号：US11264540B2
公开(公告)日：2022-03-01
申请号：US15145528
申请日：2016-05-03
Applicant: Seoul Viosys Co., Ltd.
Inventor： Joon Hee Lee , Mi Hee Lee
Abstract: A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers and an active layer disposed therebetween, a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer, a reflective metal layer contacting a portion of the light emitting structure, a cover metal layer contacting at least a portion of the reflective metal layer, a first insulation layer covering the reflective metal layer and the cover metal layer, an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole, an electrode pad disposed on the light emitting structure, and a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer, in which the electrode pad overlaps the cover metal layer.
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公开(公告)号：US20140166976A1
公开(公告)日：2014-06-19
申请号：US14132123
申请日：2013-12-18
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Ik Im , Mi Hee Lee , Ju Yong Park , Sung Su Son , Chang Yeon Kim
CPC classification number: H01L33/502 , G02B1/007 , H01L33/04 , H01L33/38 , H01L33/40 , H01L2933/0083
Abstract: Exemplary embodiments of the present invention provide a high efficiency light emitting diode including a semiconductor stack including a first-type compound semiconductor layer, an active layer, and a second-type compound semiconductor layer, a first electrode disposed on the semiconductor stack, and a graphene-metamaterial laminate structure disposed between the first electrode and the semiconductor stack.
Abstract translation: 本发明的示例性实施例提供了一种高效率发光二极管，其包括包括第一类型化合物半导体层，有源层和第二类型化合物半导体层的半导体堆叠，设置在半导体堆叠上的第一电极和 设置在第一电极和半导体堆叠之间的石墨烯 - 超材料层压结构。
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公开(公告)号：US20190044027A1
公开(公告)日：2019-02-07
申请号：US15872900
申请日：2018-01-16
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Mi Hee Lee , Chang Yeon Kim , Ju Yong Park , Jong Kyun You , Joon Hee Lee
Abstract: Disclosed herein is a vertical type light emitting diode having a mesa including a groove. The light emitting diode includes: a support substrate; a first conductivity type semiconductor layer disposed on the support substrate; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer through the second conductivity type semiconductor layer and the active layer; a first electrode disposed between the second conductivity type semiconductor layer and the support substrate and including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.
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公开(公告)号：US10193020B2
公开(公告)日：2019-01-29
申请号：US15527807
申请日：2015-12-04
Applicant: Seoul Viosys Co., Ltd.
Inventor： Mi Hee Lee , Jun Hee Lee , So Ra Lee , Mi Na Jang
Abstract: A nitride semiconductor light emitting device may include: a semiconductor layer; an active layer; a second semiconductor layer; mesa regions formed to expose the semiconductor layer; a second electrode formed under the second semiconductor layer; a cover metal layer formed at a corner under the second semiconductor layer to overlap part of the second electrode; an insulating layer formed under the cover metal layer, the second electrode, and the mesa regions and having openings to expose the semiconductor layer; a first electrode disposed in the openings and over a conductive substrate; and a second electrode pad formed over the exposed cover metal layer, wherein when the width a of the second electrode between adjacent mesa regions and the width b of the second electrode between a mesa region at the edge and an extension line of the cover metal layer at the corner have a relation of a>b.
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Patent Agency Ranking
公开(公告)号：US10749074B2
公开(公告)日：2020-08-18
申请号：US16409603
申请日：2019-05-10
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Mi Hee Lee , Chang Yeon Kim , Ju Yong Park , Jong Kyun You , Joon Hee Lee
Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.
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公开(公告)号：US20220181520A1
公开(公告)日：2022-06-09
申请号：US17682611
申请日：2022-02-28
Applicant: Seoul Viosys Co., Ltd.
Inventor： Joon Hee LEE , Mi Hee Lee
IPC: H01L33/38
Abstract: A light emitting diode including a light emitting structure including first and second conductive type semiconductor layers and an active layer, first openings and second openings formed through the light emitting structure to expose the first conductive type semiconductor layer, a metal layer electrically connected to the second conductive type semiconductor layer, an electrode layer filling the first and second openings to be electrically connected to the first conductive type semiconductor layer, electrode pads electrically connected to the metal layer, spaced apart along a first direction at first and second corners of the light emitting structure, in which the first openings are arranged along a second direction, and the second openings are arranged along a third direction crossing the first direction, and at least one of the first and second openings filled with the electrode layer is disposed at an intersection of the second and third directions.
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公开(公告)号：US10290769B2
公开(公告)日：2019-05-14
申请号：US15872900
申请日：2018-01-16
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Mi Hee Lee , Chang Yeon Kim , Ju Yong Park , Jong Kyun You , Joon Hee Lee
Abstract: A light emitting diode includes: a first conductivity type semiconductor layer; a mesa including an active layer and a second conductivity type semiconductor layer, the mesa having a groove disposed under some region of the first conductivity type semiconductor layer to expose an edge of the first conductivity type semiconductor layer, the groove exposing the first conductivity type semiconductor layer; a first electrode including a first contact portion electrically connected to the first conductivity type semiconductor layer through the groove; a second electrode disposed between the first electrode and the second conductivity type semiconductor layer and electrically connected to the second conductivity type semiconductor layer; and an upper electrode pad disposed adjacent to the first conductivity type semiconductor layer and connected to the second electrode, wherein the groove has a shape surrounding a region including a center of the mesa and partially open.
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公开(公告)号：US20160247971A1
公开(公告)日：2016-08-25
申请号：US15145528
申请日：2016-05-03
Applicant: Seoul Viosys Co., Ltd.
Inventor： Joon Hee LEE , Mi Hee Lee
CPC classification number: H01L33/382 , H01L33/405 , H01L2933/0016
Abstract: A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers and an active layer disposed therebetween, a second hole formed through the active layer and the second conductive type semiconductor layer, and exposing the first conductive type semiconductor layer, a reflective metal layer contacting a portion of the light emitting structure, a cover metal layer contacting at least a portion of the reflective metal layer, a first insulation layer covering the reflective metal layer and the cover metal layer, an electrode layer disposed on the first insulation layer, the electrode layer covering the first insulation layer and filling the second hole, an electrode pad disposed on the light emitting structure, and a first hole formed through the first conductive type semiconductor layer and corresponding to the cover metal layer, in which the electrode pad overlaps the cover metal layer.
Abstract translation: 发光二极管包括发光结构，其包括第一和第二导电类型半导体层和设置在其间的有源层，通过有源层和第二导电类型半导体层形成的第二孔，并且暴露第一导电类型半导体层， 与发光结构的一部分接触的反射金属层，与反射金属层的至少一部分接触的覆盖金属层，覆盖反射金属层和覆盖金属层的第一绝缘层，设置在第一绝缘体上的电极层 层，覆盖第一绝缘层并填充第二孔的电极层，设置在发光结构上的电极焊盘和通过第一导电类型半导体层形成并对应于覆盖金属层的第一孔，其中电极 垫重叠覆盖金属层。
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公开(公告)号：US09231169B2
公开(公告)日：2016-01-05
申请号：US14132123
申请日：2013-12-18
Applicant: SEOUL VIOSYS CO., LTD.
Inventor： Chang Ik Im , Mi Hee Lee , Ju Yong Park , Sung Su Son , Chang Yeon Kim
CPC classification number: H01L33/502 , G02B1/007 , H01L33/04 , H01L33/38 , H01L33/40 , H01L2933/0083
Abstract: Exemplary embodiments of the present invention provide a high efficiency light emitting diode including a semiconductor stack including a first-type compound semiconductor layer, an active layer, and a second-type compound semiconductor layer, a first electrode disposed on the semiconductor stack, and a graphene-metamaterial laminate structure disposed between the first electrode and the semiconductor stack.
Abstract translation: 本发明的示例性实施例提供了一种高效率发光二极管，其包括包括第一类型化合物半导体层，有源层和第二类型化合物半导体层的半导体堆叠，设置在半导体堆叠上的第一电极和 设置在第一电极和半导体堆叠之间的石墨烯 - 超材料层压结构。
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