Invention Grant
- Patent Title: Magnetic storage cell memory with back hop-prevention
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Application No.: US15371122Application Date: 2016-12-06
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Publication No.: US10297302B2Publication Date: 2019-05-21
- Inventor: Charles Augustine , Shigeki Tomishima , Wei Wu , Shih-Lien Lu , James W. Tschanz , Georgios Panagopoulos , Helia Naeimi
- Applicant: Intel Corporation
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Compass IP Law PC
- Main IPC: G11C11/16
- IPC: G11C11/16

Abstract:
An apparatus is described that includes a semiconductor chip memory array having resistive storage cells. The apparatus also includes a comparator to compare a first word to be written into the array against a second word stored in the array at the location targeted by a write operation that will write the first word into the array. The apparatus also includes circuitry to iteratively write to one or more bit locations where a difference exists between the first word and the second word with increasing write current intensity with each successive iteration.
Public/Granted literature
- US20170178708A1 MAGNETIC STORAGE CELL MEMORY WITH BACK HOP-PREVENTION Public/Granted day:2017-06-22
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