Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15837299Application Date: 2017-12-11
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Publication No.: US10298216B2Publication Date: 2019-05-21
- Inventor: Yasunari Harada , Masato Osawa , Hideki Kato
- Applicant: OLYMPUS CORPORATION
- Applicant Address: JP Tokyo
- Assignee: OLYMPUS CORPORATION
- Current Assignee: OLYMPUS CORPORATION
- Current Assignee Address: JP Tokyo
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H03L5/00
- IPC: H03L5/00 ; H03K5/08 ; H04N5/374 ; H04N5/378 ; H03F3/45 ; H03M1/10 ; H03M1/46

Abstract:
A semiconductor device is provided that includes an amplification circuit, a downstream circuit, and a clipping circuit. The amplification circuit includes a sampling capacitor, a feedback capacitor, and an operational amplifier circuit. The sampling capacitor holds air input signal on which sampling is performed, as a signal whose reference is a first reference voltage. The signal that is held in the sampling capacitor is transferred to the feedback capacitor. The operational amplifier circuit amplifies the signal that is held in the sampling capacitor, according to a ratio between values of the sampling capacitor and the feedback capacitor, and outputs the amplified signal, as a signal whose reference is a second reference voltage. The clipping circuit limits a voltage of an output signal of the operational amplifier circuit to a predetermined voltage or below.
Public/Granted literature
- US20180102768A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-04-12
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