Invention Grant
- Patent Title: Dual cavity pressure structures
-
Application No.: US15636463Application Date: 2017-06-28
-
Publication No.: US10308503B2Publication Date: 2019-06-04
- Inventor: Jong Il Shin , Peter Smeys , Daesung Lee
- Applicant: InvenSense, Inc.
- Applicant Address: US CA San Jose
- Assignee: InvenSense, Inc.
- Current Assignee: InvenSense, Inc.
- Current Assignee Address: US CA San Jose
- Main IPC: B81B7/02
- IPC: B81B7/02 ; B81C1/00 ; G01P15/08
Abstract:
An apparatus includes a cavity within a substrate. A MEMS structure is within the cavity, wherein the cavity includes the MEMS structure. A trench is connected to the cavity, wherein the trench is not directly opposite the MEMS structure. An oxide layer lines the trench and the cavity. A seal layer seals the trench and traps a predetermined pressure within the cavity and the trench.
Public/Granted literature
- US20170297909A1 DUAL CAVITY PRESSURE STRUCTURES Public/Granted day:2017-10-19
Information query
