- 专利标题: Protected trench isolation for fin-type field-effect transistors
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申请号: US15919594申请日: 2018-03-13
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公开(公告)号: US10312150B1公开(公告)日: 2019-06-04
- 发明人: Fuad Al-Amoody , Jinping Liu , Joseph Kassim , Bharat Krishnan
- 申请人: GLOBALFOUNDRIES Inc.
- 申请人地址: KY Grand Cayman
- 专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人: GLOBALFOUNDRIES Inc.
- 当前专利权人地址: KY Grand Cayman
- 代理机构: Thompson Hine LLP
- 代理商 Francois Pagette
- 主分类号: H01L21/8234
- IPC分类号: H01L21/8234 ; H01L21/311 ; H01L21/033 ; H01L21/02 ; H01L21/308 ; H01L29/78 ; H01L21/475 ; H01L29/66 ; H01L29/06 ; H01L21/762
摘要:
Methods of forming a fin-type field-effect transistor. A gate structure is formed that extends across a plurality of semiconductor fins. A spacer layer composed of a dielectric material is conformally deposited over the gate structure, the semiconductor fins, and a dielectric layer in gaps between the semiconductor fins. A protective layer is conformally deposited over the spacer layer. The protective layer over the dielectric layer in the gaps between the semiconductor fins is masked, and the protective layer is then removed from the gate structure and the semiconductor fins selective to the dielectric material of the spacer layer.