Invention Grant
- Patent Title: Image sensor of global shutter type
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Application No.: US15358737Application Date: 2016-11-22
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Publication No.: US10321073B2Publication Date: 2019-06-11
- Inventor: Francois Roy
- Applicant: STMicroelectronics (Crolles 2) SAS
- Applicant Address: FR Crolles
- Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee: STMicroelectronics (Crolles 2) SAS
- Current Assignee Address: FR Crolles
- Agency: Crowe & Dunlevy
- Priority: FR1655152 20160606; FR1655153 20160606
- Main IPC: H04N5/353
- IPC: H04N5/353 ; H04N5/378 ; H04N5/372 ; H01L27/146 ; H04N5/363

Abstract:
Each pixel of a global shutter back-side illuminated image sensor includes a photosensitive area. On a front surface, a first transistor includes a vertical ring-shaped electrode penetrating into the photosensitive area and laterally delimiting a memory area. The memory area penetrates into the photosensitive area less deeply than the insulated vertical ring-shaped electrode. A read area is formed in an intermediate area which is formed in the memory area. The memory area, the intermediate area and read area define a second transistor having an insulated horizontal electrode forming a gate of the second transistor. The memory area may be formed by a first and second memory areas and an output signal is generated indicative of a difference between charge stored in the first memory area and charge stored in the second memory area after a charge transfer to the first memory area.
Public/Granted literature
- US20170353673A1 IMAGE SENSOR OF GLOBAL SHUTTER TYPE Public/Granted day:2017-12-07
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