- 专利标题： Sacrificial layer for channel surface retention and inner spacer formation in stacked-channel FETs
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申请号： US15493441申请日： 2017-04-21
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公开(公告)号： US10325983B2公开(公告)日： 2019-06-18
- 发明人: Josephine B. Chang , Michael A. Guillorn , Isaac Lauer , Xin Miao
- 申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 申请人地址： US NY Armonk
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY Armonk
- 代理机构： Tutunjian & Bitetto, P.C.
- 代理商 Vazken Alexanian
- 主分类号： H01L27/12
- IPC分类号： H01L27/12 ; H01L29/06 ; H01L29/66 ; H01L29/08 ; H01L29/423 ; H01L29/10 ; H01L29/417 ; H01L29/78
摘要：
Field effect transistors include a stack of nanosheets of vertically arranged channel layers. A source and drain region is positioned at respective ends of the vertically arranged channel layers. A gate stack is formed over, around, and between the vertically arranged channel layers. The transistor includes a plurality of internal spacers, each formed between the gate stack and a respective source or drain region, with at least one pair of spacers being positioned above an uppermost channel layer.
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