Invention Grant
- Patent Title: FinFET device and fabricating method thereof
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Application No.: US16229026Application Date: 2018-12-21
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Publication No.: US10326006B2Publication Date: 2019-06-18
- Inventor: Yen-Ming Peng , Chi-Wen Liu , Hsin-Chieh Huang , Yi-Ju Hsu , Horng-Huei Tseng
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsinchu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Slater Matsil, LLP
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L29/66 ; H01L29/78
Abstract:
A FinFET device includes a substrate, a fin formed on the substrate, and a gate electrode crossing the fin. The gate electrode includes a head portion and a tail portion, and the tail portion is connected to the head portion and extended toward the substrate. The width of the head portion is greater than that of the tail portion.
Public/Granted literature
- US20190148523A1 FinFET Device and Fabricating Method Thereof Public/Granted day:2019-05-16
Information query
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