Provided is a method of operating a nonvolatile memory device including a memory cell array connected to a plurality of lines. The method may include performing a first loop including a first recovery section having a first operation time period, on a first line of the plurality of lines by applying a first voltage for a time period, wherein the first voltage is discharged with a first slope, and performing a second loop after the first loop including a second recovery section having a second operation time period that is different from the first operation time period, on the first line by applying a second voltage for a time period, wherein the second voltage is discharged with a second slope less than the first slope.