Invention Grant
- Patent Title: Method for fabricating semiconductor device with strained silicon structure
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Application No.: US15820443Application Date: 2017-11-22
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Publication No.: US10332750B2Publication Date: 2019-06-25
- Inventor: Kuang-Hsiu Chen , Hsu Ting , Chung-Fu Chang , Shi-You Liu , Chun-Wei Yu , Yu-Ren Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Applicant Address: TW Hsin-Chu
- Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee: UNITED MICROELECTRONICS CORP.
- Current Assignee Address: TW Hsin-Chu
- Agent Winston Hsu
- Main IPC: H01L21/3105
- IPC: H01L21/3105 ; H01L29/78 ; H01L29/66 ; H01L21/02 ; H01L21/265 ; H01L29/165 ; H01L21/266 ; H01L21/324 ; H01L29/08
Abstract:
A method for fabricating a semiconductor device. A gate is formed on a substrate. A spacer is formed on each sidewall of the gate. A hard mask layer is formed on the spacer. A recessed region is formed in the substrate and adjacent to the hard mask layer. An epitaxial layer is formed in the recessed region. The substrate is subjected to an ion implantation process to bombard particle defects on the hard mask layer with inert gas ions. An annealing process is performed to repair damages to the epitaxial layer caused by the ion implantation process. The hard mask layer is then removed.
Public/Granted literature
- US20190157455A1 METHOD FOR FABRICATING SEMICONDUCTOR DEVICE WITH STRAINED SILICON STRUCTURE Public/Granted day:2019-05-23
Information query
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