Invention Grant
- Patent Title: System and method for biasing an RF switch
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Application No.: US15644435Application Date: 2017-07-07
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Publication No.: US10333510B2Publication Date: 2019-06-25
- Inventor: Valentyn Solomko , Winfried Bakalski , Andrea Cattaneo , Bernd Schleicher , Anton Steltenpohl , Hans Taddiken , Danial Tayari
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TEHCNOLOGIES AG
- Current Assignee: INFINEON TEHCNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Agency: Slater Matsil, LLP
- Main IPC: H03K17/16
- IPC: H03K17/16

Abstract:
In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.
Public/Granted literature
- US20190013806A1 System and Method for Biasing an RF Switch Public/Granted day:2019-01-10
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