公开(公告)号：US12068123B2

公开(公告)日：2024-08-20

申请号：US17455595

申请日：2021-11-18

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Dominik Heiss ,  Christoph Kadow

IPC: H01H47/26 ,  H01H37/02 ,  H01H50/12

CPC classification number: H01H37/02

Abstract: A switch device includes a phase change switch and a memory for storing a target state of the phase change switch. A controller determines a phase state of the phase change switch, and, if the state of the phase change switch does not correspond to the target state, controls a heater of the phase change switch to change the state of the phase changes switch to the target state.

公开(公告)号：US20240056072A1

公开(公告)日：2024-02-15

申请号：US18496262

申请日：2023-10-27

Applicant: Infineon Technologies AG

Inventor： Dominik Heiss ,  Christoph Kadow ,  Hans Taddiken

IPC: H03K17/56

CPC classification number: H03K17/56

Abstract: In an embodiment, a phase change switch device is provided. The phase change switch includes a phase change material, a set of heaters arranged to heat the phase change material, and a switch arrangement. The switch arrangement includes a plurality of switches, and is configured to selectively provide electrical power to the set of the heaters.

公开(公告)号：US20160329891A1

公开(公告)日：2016-11-10

申请号：US14705518

申请日：2015-05-06

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Anton Steltenpohl ,  Hans Taddiken

IPC: H03K17/687

CPC classification number: H03K17/693

Abstract: In accordance with an embodiment, a radio frequency (RF) switching circuit includes a plurality of series connected RF switch cells comprising a load path and a control node, a plurality of first gate resistors coupled between control nodes of adjacent RF switch cells, and an input resistor having a first end coupled to a control node of one of the plurality of RF switch cells and a second end configured to an output of a switch driver. Each of the plurality of series connected RF switch cells includes a switch transistor.

Abstract translation: 根据实施例，射频（RF）切换电路包括多个串联连接的RF开关单元，其包括负载路径和控制节点，耦合在相邻RF开关单元的控制节点之间的多个第一栅极电阻，以及 输入电阻器，其具有耦合到所述多个RF开关单元中的一个的控制节点的第一端，以及配置为所述开关驱动器的输出的第二端。 多个串联连接的RF开关单元中的每一个包括开关晶体管。

公开(公告)号：US20220199343A1

公开(公告)日：2022-06-23

申请号：US17455595

申请日：2021-11-18

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Dominik Heiss ,  Christoph Kadow

IPC: H01H37/02

Abstract: A switch device includes a phase change switch and a memory for storing a target state of the phase change switch. A controller determines a phase state of the phase change switch, and, if the state of the phase change switch does not correspond to the target state, controls a heater of the phase change switch to change the state of the phase changes switch to the target state.

公开(公告)号：US20190013806A1

公开(公告)日：2019-01-10

申请号：US15644435

申请日：2017-07-07

Applicant: Infineon Technologies AG

Inventor： Valentyn Solomko ,  Winfried Bakalski ,  Andrea Cattaneo ,  Bernd Schleicher ,  Anton Steltenpohl ,  Hans Taddiken ,  Danial Tayari

IPC: H03K17/16

CPC classification number: H03K17/162

Abstract: In accordance with an embodiment, a circuit includes an RF switch, a leakage compensation circuit having a bias port and a reference port, a replica resistor coupled between a reference node and the reference port of the leakage compensation circuit, and a bias resistor coupled between the bias port of the leakage compensation circuit and a load path of the RF switch. The leakage compensation circuit configured to mirror a current from the bias port to the reference port, and apply a voltage from the reference port to the bias port.

公开(公告)号：US09984917B2

公开(公告)日：2018-05-29

申请号：US14283242

申请日：2014-05-21

Applicant: Infineon Technologies AG

Inventor： Christian Kuehn ,  Martin Bartels ,  Henning Feick ,  Dirk Offenberg ,  Anton Steltenpohl ,  Hans Taddiken ,  Ines Uhlig

IPC: H01L21/76 ,  H01L21/762 ,  H01L29/06 ,  H01L21/265

CPC classification number: H01L21/76237 ,  H01L21/26506 ,  H01L21/2652 ,  H01L21/26586 ,  H01L29/0607 ,  H01L29/0649

Abstract: A method for manufacturing a semiconductor device in accordance with various embodiments may include: forming an opening in a first region of a semiconductor substrate, the opening having at least one sidewall and a bottom; implanting dopant atoms into the at least one sidewall and the bottom of the opening; configuring at least a portion of a second region of the semiconductor substrate laterally adjacent to the first region as at least one of an amorphous or polycrystalline region; and forming an interconnect over at least one of the first and second regions of the semiconductor substrate.

公开(公告)号：US20180052479A1

公开(公告)日：2018-02-22

申请号：US15679263

申请日：2017-08-17

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Werner Simbuerger ,  Anton Steltenpohl ,  Hans Taddiken

IPC: G05F3/20 ,  H01L27/06 ,  H01L27/092 ,  H03G1/00 ,  H01L29/06 ,  H01L29/10

CPC classification number: G05F3/205 ,  H01L27/0629 ,  H01L27/0922 ,  H01L29/0615 ,  H01L29/1029 ,  H03G1/0023 ,  H03G1/0029 ,  H03G1/007 ,  H03G1/0088

Abstract: In accordance with an embodiment, an integrated circuit includes a substrate, an amplifier MOSFET, and a bias voltage terminal configured to generate a potential difference of the substrate relative to at least one load terminal of the amplifier MOSFET.

公开(公告)号：US09742400B2

公开(公告)日：2017-08-22

申请号：US14705518

申请日：2015-05-06

Applicant: Infineon Technologies AG

Inventor： Winfried Bakalski ,  Anton Steltenpohl ,  Hans Taddiken

IPC: H03K17/693 ,  H03K17/687 ,  H03K17/16

CPC classification number: H03K17/693

Abstract: In accordance with an embodiment, a radio frequency (RF) switching circuit includes a plurality of series connected RF switch cells comprising a load path and a control node, a plurality of first gate resistors coupled between control nodes of adjacent RF switch cells, and an input resistor having a first end coupled to a control node of one of the plurality of RF switch cells and a second end configured to an output of a switch driver. Each of the plurality of series connected RF switch cells includes a switch transistor.

公开(公告)号：US09129836B2

公开(公告)日：2015-09-08

申请号：US14016924

申请日：2013-09-03

Applicant: Infineon Technologies AG

Inventor： Reinhard Losehand ,  Hans Taddiken ,  Udo Gerlach

IPC: H01L27/088 ,  H01L29/10 ,  H03K17/687 ,  H03K17/693

CPC classification number: H01L27/088 ,  H01L29/1083 ,  H01L29/1087 ,  H03K17/6871 ,  H03K17/693

Abstract: A circuit includes first, second, third and fourth terminals, and first and second switches. The first switch switches a first signal from the first terminal to the second terminal or from the first terminal to the fourth terminal. The second switch switches a second signal from the third terminal to the second terminal or from the third terminal to the fourth terminal. The first switch comprises a first switching element with a first high-frequency switching transistor connected between the first terminal and the second terminal, and a second switching element with a second high-frequency switching transistor connected between the first terminal and the fourth terminal. The second switch comprises a third switching element with a third high-frequency transistor connected between the third terminal and the second terminal and comprises a fourth switching element with a fourth high-frequency switching transistor connected between the third terminal and the fourth terminal.

Abstract translation: 电路包括第一，第二，第三和第四端子以及第一和第二开关。 第一开关将第一信号从第一端子切换到第二端子，或者从第一端子切换到第四端子。 第二开关将第二信号从第三端子切换到第二端子，或者从第三端子切换到第四端子。 第一开关包括连接在第一端子和第二端子之间的第一高频开关晶体管的第一开关元件和连接在第一端子和第四端子之间的第二高频开关晶体管的第二开关元件。 第二开关包括具有连接在第三端子和第二端子之间的第三高频晶体管的第三开关元件，并且包括连接在第三端子和第四端子之间的第四高频开关晶体管的第四开关元件。

公开(公告)号：US20140070872A1

公开(公告)日：2014-03-13

申请号：US14082919

申请日：2013-11-18

Applicant: Infineon Technologies AG

Inventor： Hans Taddiken ,  Thomas Boettner

IPC: H03K17/693

CPC classification number: H03K17/693 ,  H03K2217/0054

Abstract: An RF switch circuit for switching RF signals includes a first terminal and a second terminal and a series connection of a plurality of transistors between the first terminal of the RF switch circuit and the second terminal of the RF switch circuit. Furthermore, the RF switch circuit includes a control circuit configured to conductively couple, in a high impedance state of the RF switch circuit, the first terminal of the RF switch circuit to a control terminal of a first transistor in a series of the series connection of the plurality of transistors. The second terminal of the RF switch circuit is conductively coupled to a control terminal of a last transistor in the series of the series connection of the plurality of transistors.

Abstract translation: 用于切换RF信号的RF开关电路包括第一端子和第二端子以及RF开关电路的第一端子与RF开关电路的第二端子之间的多个晶体管的串联连接。 此外，RF开关电路包括控制电路，其被配置为在RF开关电路的高阻抗状态下将RF开关电路的第一端子以一系列串联连接的方式导电耦合到第一晶体管的控制端子 多个晶体管。 RF开关电路的第二端子电导耦合到多个晶体管的串联连接中的最后一个晶体管的控制端子。