- 专利标题: Compensated photonic device structure and fabrication method thereof
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申请号: US15612086申请日: 2017-06-02
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公开(公告)号: US10340409B2公开(公告)日: 2019-07-02
- 发明人: Mengyuan Huang , Liangbo Wang , Su Li , Tuo Shi , Pengfei Cai , Wang Chen , Ching-yin Hong , Dong Pan
- 申请人: SiFotonics Technologies Co., Ltd.
- 申请人地址: US MA Woburn
- 专利权人: SIFOTONICS TECHNOLOGIES CO., LTD.
- 当前专利权人: SIFOTONICS TECHNOLOGIES CO., LTD.
- 当前专利权人地址: US MA Woburn
- 代理机构: Han IP PLLC
- 代理商 Andy M. Han
- 主分类号: H01L31/107
- IPC分类号: H01L31/107 ; H01L31/105
摘要:
Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.
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