Ge-Si P-I-N Photodiode With Reduced Dark Current And Fabrication Method Thereof
    2.
    发明申请
    Ge-Si P-I-N Photodiode With Reduced Dark Current And Fabrication Method Thereof 有权
    具有降低暗电流的Ge-Si P-I-N光电二极管及其制造方法

    公开(公告)号:US20150028386A1

    公开(公告)日:2015-01-29

    申请号:US14339443

    申请日:2014-07-23

    摘要: Various embodiments of a germanium-on-silicon (Ge—Si) photodiode are provided along with the fabrication method thereof. In one aspect, a Ge—Si photodiode includes a doped bottom region at the bottom of a germanium layer, formed by thermal diffusion of donors implanted into a silicon layer. The Ge—Si photodiode further includes a doped sidewall region of Ge mesa formed by ion implantation. Thus, the electric field is distributed in the intrinsic region of the Ge—Si photodiode where there is low dislocation density. The doped bottom region and sidewall region of the Ge layer prevent electric field from penetrating into the Ge—Si interface and Ge mesa sidewall region, where a large amount of dislocations are distributed. This design significantly suppresses dark current.

    摘要翻译: 提供硅锗(Ge-Si)光电二极管的各种实施例及其制造方法。 在一个方面,Ge-Si光电二极管包括在锗层底部的掺杂底部区域,其通过植入硅层中的供体的热扩散形成。 Ge-Si光电二极管还包括通过离子注入形成的Ge台面的掺杂侧壁区域。 因此,电场分布在位错密度低的Ge-Si光电二极管的本征区域中。 Ge层的掺杂底部区域和侧壁区域防止电场渗透到分布有大量位错的Ge-Si界面和Ge台面侧壁区域。 该设计显着抑制了暗电流。

    High-speed germanium on silicon avalanche photodiode
    3.
    发明授权
    High-speed germanium on silicon avalanche photodiode 有权
    高硅锗硅硅光电二极管

    公开(公告)号:US09478689B2

    公开(公告)日:2016-10-25

    申请号:US14961675

    申请日:2015-12-07

    IPC分类号: H01L31/107 H01L31/0392

    摘要: A high-speed germanium on silicon (Ge/Si) avalanche photodiode may include a substrate layer, a bottom contact layer disposed on the substrate layer, a buffer layer disposed on the bottom contact layer, an electric field control layer disposed on the buffer layer, an avalanche layer disposed on the electric field control layer, a charge layer disposed on the avalanche layer, an absorption layer disposed on the charge layer, and a top contact layer disposed on the absorption layer. The electric field contact layer may be configured to control an electric field in the avalanche layer.

    摘要翻译: 硅(Ge / Si)雪崩光电二极管上的高速锗可以包括基底层,设置在基底层上的底部接触层,设置在底部接触层上的缓冲层,设置在缓冲层上的电场控制层 设置在电场控制层上的雪崩层,设置在雪崩层上的电荷层,设置在电荷层上的吸收层和设置在吸收层上的顶部接触层。 电场接触层可以被配置为控制雪崩层中的电场。

    A Ge-Si Avalanche Photodiode With Silicon Buffer Layer And Edge Electric Field Buffer Region
    5.
    发明申请
    A Ge-Si Avalanche Photodiode With Silicon Buffer Layer And Edge Electric Field Buffer Region 有权
    具有硅缓冲层和边缘电场缓冲区的Ge-Si雪崩光电二极管

    公开(公告)号:US20150028443A1

    公开(公告)日:2015-01-29

    申请号:US14339440

    申请日:2014-07-23

    摘要: Various embodiments of a germanium-on-silicon (Ge—Si) avalanche photodiode are provided. In one aspect, the Ge—Si avalanche photodiode utilizes a silicon buffer layer to reduce the energy of holes drifting into absorption layer where the absorption material has lower ionization threshold, thereby suppressing multiplication noise and increasing the gain-bandwidth product of the avalanche photodiode. In another aspect, the Ge—Si avalanche photodiode utilizes an edge electric field buffer layer region to reduce the electric field along the sidewall of multiplication layer, where high electric field is applied for avalanche, thereby reducing probability of sidewall breakdown and enhancing reliability of the avalanche photodiode.

    摘要翻译: 提供了硅上硅(Ge-Si)雪崩光电二极管的各种实施例。 一方面,Ge-Si雪崩光电二极管利用硅缓冲层来降低漂移到吸收层中的空穴的能量,其中吸收材料具有较低的离子化阈值,从而抑制乘法噪声并增加雪崩光电二极管的增益带宽乘积。 另一方面,Ge-Si雪崩光电二极管利用边缘电场缓冲层区域来减小沿着增加层的侧壁的电场,其中施加高电场用于雪崩,从而降低侧壁破裂的可能性并提高其可靠性 雪崩光电二极管

    High-Speed Germanium On Silicon Avalanche Photodiode
    7.
    发明申请
    High-Speed Germanium On Silicon Avalanche Photodiode 有权
    硅片雪崩光电二极管高速锗

    公开(公告)号:US20160172525A1

    公开(公告)日:2016-06-16

    申请号:US14961675

    申请日:2015-12-07

    IPC分类号: H01L31/107 H01L31/0392

    摘要: A high-speed germanium on silicon (Ge/Si) avalanche photodiode may include a substrate layer, a bottom contact layer disposed on the substrate layer, a buffer layer disposed on the bottom contact layer, an electric field control layer disposed on the buffer layer, an avalanche layer disposed on the electric field control layer, a charge layer disposed on the avalanche layer, an absorption layer disposed on the charge layer, and a top contact layer disposed on the absorption layer. The electric field contact layer may be configured to control an electric field in the avalanche layer.

    摘要翻译: 硅(Ge / Si)雪崩光电二极管上的高速锗可以包括基底层,设置在基底层上的底部接触层,设置在底部接触层上的缓冲层,设置在缓冲层上的电场控制层 设置在电场控制层上的雪崩层,设置在雪崩层上的电荷层,设置在电荷层上的吸收层和设置在吸收层上的顶部接触层。 电场接触层可以被配置为控制雪崩层中的电场。

    Compensated Photonic Device Structure And Fabrication Method Thereof
    8.
    发明申请
    Compensated Photonic Device Structure And Fabrication Method Thereof 有权
    补偿光子器件结构及其制作方法

    公开(公告)号:US20150008433A1

    公开(公告)日:2015-01-08

    申请号:US14326250

    申请日:2014-07-08

    IPC分类号: H01L31/109 H01L31/0376

    CPC分类号: H01L31/1075 H01L31/105

    摘要: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

    摘要翻译: 本文描述了补偿的光子器件结构及其制造方法的各种实施例。 在一个方面,光子器件可以包括衬底和设置在衬底上的功能层。 衬底可以由第一材料制成,并且功能层可以由不同于第一材料的第二材料制成。 光子器件还可以包括形成在衬底和功能层之间的界面区域处的补偿区域。 补偿区域可以掺杂有补偿掺杂剂,使得在功能层的界面区域附近的第一载流子浓度降低,功能层的主体区域中的第二载流子浓度降低。

    Compensated photonic device structure and fabrication method thereof

    公开(公告)号:US10340409B2

    公开(公告)日:2019-07-02

    申请号:US15612086

    申请日:2017-06-02

    IPC分类号: H01L31/107 H01L31/105

    摘要: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.