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公开(公告)号：US11588555B2
公开(公告)日：2023-02-21
申请号：US17389387
申请日：2021-07-30
发明人： Pengfei Cai , Zhou Fang , Yi Li , Ning Zhang , Rangchen Yu , Ching-yin Hong , Dong Pan
摘要： Various embodiments of a monolithic transceiver are described, which may be fabricated on a semiconductor substrate. The monolithic transceiver includes a coherent receiver module (CRM), a coherent transmitter module (CTM), and a local oscillation splitter to feed a local oscillation to the CRM and the CTM with a tunable power ratio. The monolithic transceiver provides tunable responsivity by employing photodiodes for opto-electrical conversion. The monolithic transceiver also employs a polarization beam rotator-splitter (PBRS) and a polarization beam rotator-combiner (PBRC) for supporting modulation schemes including polarization multiplexed quadrature amplitude modulation (PM-QAM) and polarization multiplexed quadrature phase shift keying (PM-QPSK).
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公开(公告)号：US11115125B2
公开(公告)日：2021-09-07
申请号：US16843795
申请日：2020-04-08
发明人： Pengfei Cai , Zhou Fang , Yi Li , Ning Zhang , Rangchen Yu , Ching-yin Hong , Dong Pan
摘要： Various embodiments of a monolithic transceiver are described, which may be fabricated on a semiconductor substrate. The monolithic transceiver includes a coherent receiver module (CRM), a coherent transmitter module (CTM), and a local oscillation splitter to feed a local oscillation to the CRM and the CTM with a tunable power ratio. The monolithic transceiver provides tunable responsivity by employing avalanche photodiodes (APDs) for opto-electrical conversion. The monolithic transceiver also employs a polarization beam rotator-splitter (PBRS) and a polarization beam rotator-combiner (PBRC) for supporting modulation schemes including polarization multiplexed quadrature amplitude modulation (PM-QAM) and polarization multiplexed quadrature phase shift keying (PM-QPSK).
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公开(公告)号：US20200150342A1
公开(公告)日：2020-05-14
申请号：US16737899
申请日：2020-01-08
发明人： Tuo Shi , Tzung-I Su , Yongbo Shao , Dong Pan
摘要： Various embodiments of a photonic integrated circuit (PIC) are described herein. A PIC, functioning as a coherent receiver, may include optical components such as an optical coupler, a directional coupler, a beam splitter, a polarizing beam rotator-splitter, a variable optical attenuator, a monitor photodiode, 90-degree hybrid mixer, and a waveguide photodiode. The PIC may also include electrical components such as an electrode, a capacitor, a resistor and a Zener diode.
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公开(公告)号：US20170271545A1
公开(公告)日：2017-09-21
申请号：US15612086
申请日：2017-06-02
发明人： Mengyuan Huang , Liangbo Wang , Su Li , Tuo Shi , Pengfei Cai , Wang Chen , Ching-yin Hong , Dong Pan
IPC分类号： H01L31/107 , H01L31/105
CPC分类号： H01L31/1075 , H01L31/105
摘要： Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.
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公开(公告)号：US20170271543A1
公开(公告)日：2017-09-21
申请号：US15613133
申请日：2017-06-02
发明人： Mengyuan Huang , Su Li , Tzung-I Su , Pengfei Cai , Wang Chen , Ching-yin Hong , Dong Pan
IPC分类号： H01L31/109 , H01L31/0216 , H01L31/20 , H01L31/0376 , H01L31/0224
CPC分类号： H01L31/109 , H01L31/02161 , H01L31/022408 , H01L31/03762 , H01L31/105 , H01L31/1075 , H01L31/204 , H01L31/208
摘要： Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. A photonic device may include a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, a Si waveguide and an n-type contact layer formed on the BOX layer, a Si multiplication layer disposed on the n-type contact layer, a p-type Si charge layer disposed on the Si multiplication layer, a germanium (Ge) absorption layer disposed on the p-type Si charge layer, a p-type contact layer disposed on the Ge absorption layer, and a metal layer disposed on the p-type contact layer. A compensated region may be formed between the p-type Si charge layer and the Ge absorption layer with a portion of the compensated region in the p-type Si charge layer and another portion of the compensated region in the Ge absorption layer.
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6.发明申请Ge/Si Avalanche Photodiode With Integrated Heater And Fabrication Method Thereof 审中-公开Ge / Si雪崩光电二极管与集成加热器及其制作方法公开(公告)号：US20160155883A1
公开(公告)日：2016-06-02
申请号：US15014331
申请日：2016-02-03
发明人： Tuo Shi , Pengfei Cai , Liangbo Wang , Nai Zhang , Wang Chen , Su Li , Ching-yin Hong , Mengyuan Huang , Dong Pan
IPC分类号： H01L31/107 , H01L31/028 , H01L31/0232 , H01L31/024 , H01L31/0203
CPC分类号： H01L31/1075 , H01L27/14 , H01L31/02027 , H01L31/0203 , H01L31/02327 , H01L31/024 , H01L31/028 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： Various embodiments of a novel structure of a Ge/Si avalanche photodiode with an integrated heater, as well as a fabrication method thereof, are provided. In one aspect, a doped region is formed either on the top silicon layer or the silicon substrate layer to function as a resistor. When the environmental temperature decreases to a certain point, a temperature control loop will be automatically triggered and a proper bias is applied along the heater, thus the temperature of the junction region of a Ge/Si avalanche photodiode is kept within an optimized range to maintain high sensitivity of the avalanche photodiode and low bit-error rate level.
摘要翻译： 提供具有集成加热器的Ge / Si雪崩光电二极管的新颖结构的各种实施例及其制造方法。 在一个方面，掺杂区域形成在顶部硅层或硅衬底层上，起到电阻的作用。 当环境温度降低到某一点时，将自动触发一个温度控制回路并沿加热器施加适当的偏压，因此Ge / Si雪崩光电二极管的接合区域的温度保持在优化的范围内以保持 高灵敏度的雪崩光电二极管和低误码率水平。
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7.发明授权Ge—Si P-I-N photodiode with reduced dark current and fabrication method thereof 有权具有降低的暗电流的Ge-Si P-I-N光电二极管及其制造方法公开(公告)号：US09287432B2
公开(公告)日：2016-03-15
申请号：US14339443
申请日：2014-07-23
发明人： Tuo Shi , Liangbo Wang , Pengfei Cai , Ching-yin Hong , Mengyuan Huang , Wang Chen , Su Li , Dong Pan
IPC分类号： H01L31/105 , H01L31/0232 , H01L31/18
CPC分类号： H01L31/105 , H01L31/02327 , H01L31/1804 , Y02E10/547
摘要： Various embodiments of a germanium-on-silicon (Ge—Si) photodiode are provided along with the fabrication method thereof. In one aspect, a Ge—Si photodiode includes a doped bottom region at the bottom of a germanium layer, formed by thermal diffusion of donors implanted into a silicon layer. The Ge—Si photodiode further includes a doped sidewall region of Ge mesa formed by ion implantation. Thus, the electric field is distributed in the intrinsic region of the Ge—Si photodiode where there is low dislocation density. The doped bottom region and sidewall region of the Ge layer prevent electric field from penetrating into the Ge—Si interface and Ge mesa sidewall region, where a large amount of dislocations are distributed. This design significantly suppresses dark current.
摘要翻译： 提供硅锗（Ge-Si）光电二极管的各种实施例及其制造方法。 在一个方面，Ge-Si光电二极管包括在锗层底部的掺杂底部区域，其通过植入硅层中的供体的热扩散形成。 Ge-Si光电二极管还包括通过离子注入形成的Ge台面的掺杂侧壁区域。 因此，电场分布在位错密度低的Ge-Si光电二极管的本征区域中。 Ge层的掺杂底部区域和侧壁区域防止电场渗透到分布有大量位错的Ge-Si界面和Ge台面侧壁区域。 该设计显着抑制了暗电流。
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8.发明授权公开(公告)号：US09285651B2
公开(公告)日：2016-03-15
申请号：US14187023
申请日：2014-02-21
发明人： Changhua Chen , Dong Pan , Yanwu Zhang , Wang Chen , Pengfei Cai , Ching-yin Hong , Siying Liu
CPC分类号： G02F1/2257 , G02B2006/12097 , G02B2006/12142 , G02F1/025
摘要： A device, such as a silicon modulator, in accordance with the present disclosure employs PN diodes without sacrificing the modulation depth, while achieving lower loss and better impedance matching to 50-Ohm drivers. In one embodiment, the device includes an input waveguide, an input optical splitter coupled to the input waveguide, first and second optical phase shifters coupled to the input optical splitter, an output optical splitter coupled to the first and second phase shifters, and an output waveguide coupled to the output optical splitter. The phase shifters are designed with variant capacitance per unit length.
摘要翻译： 根据本公开的器件，例如硅调制器，采用PN二极管，而不牺牲调制深度，同时实现对50欧姆驱动器的更低损耗和更好的阻抗匹配。 在一个实施例中，该装置包括输入波导，耦合到输入波导的输入光分路器，耦合到输入光分路器的第一和第二光移相器，耦合到第一和第二移相器的输出光分路器，以及输出 波导耦合到输出光分路器。 移相器设计为每单位长度变化的电容。
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公开(公告)号：US20150236478A1
公开(公告)日：2015-08-20
申请号：US14705188
申请日：2015-05-06
发明人： Mengyuan Huang , Pengfei Cai , Liangbo Wang , Su Li , Wang Chen , Ching-yin Hong , Dong Pan
CPC分类号： H01S5/2054 , H01L31/035254 , H01L31/105 , H01S5/021 , H01S5/18325 , H01S5/18341 , H01S5/20 , H01S5/2004 , H01S5/2018 , H01S5/2059 , H01S5/2205 , H01S5/3013 , H01S5/3027 , H01S5/3031
摘要： Various embodiments of a photonic device and fabrication method thereof are described herein. A device may include a substrate, a bottom contact layer, a current confinement layer, an intrinsic layer, an absorption layer, and a top contact layer. The bottom contact layer may be of a first polarity and may be disposed on the substrate. The current confinement layer may be disposed on the bottom contact layer. The intrinsic layer may be disposed on the current confinement layer. The absorption layer may be disposed on the intrinsic layer. The top contact layer may be of a second polarity and may be disposed on the absorption layer. The second polarity is opposite to the first polarity.
摘要翻译： 本文描述了光子器件的各种实施例及其制造方法。 器件可以包括衬底，底部接触层，电流限制层，本征层，吸收层和顶部接触层。 底部接触层可以是第一极性并且可以设置在基底上。 电流限制层可以设置在底部接触层上。 本征层可以设置在电流限制层上。 吸收层可以设置在本征层上。 顶部接触层可以是第二极性并且可以设置在吸收层上。 第二极性与第一极性相反。
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公开(公告)号：US09042417B2
公开(公告)日：2015-05-26
申请号：US14079318
申请日：2013-11-13
发明人： Mengyuan Huang , Liangbo Wang , Wang Chen , Ching-yin Hong , Dong Pan
CPC分类号： H01L31/18 , H01L31/0232 , H01L31/035254 , H01L31/105 , H01S5/18325 , H01S5/18341 , H01S5/20 , H01S5/2004 , H01S5/2018 , H01S5/2059 , H01S5/2205
摘要： Various embodiments of a photonic device and fabrication method thereof are provided. In one aspect, a device includes a substrate, a current confinement layer disposed on the substrate, an absorption layer disposed in the current confinement layer, and an electrical contact layer disposed on the absorption layer. The current confinement layer is doped in a pattern and configured to reduce dark current in the device. The photonic device may be a photodiode or a laser.
摘要翻译： 提供了光子器件的各种实施例及其制造方法。 一方面，一种器件包括衬底，设置在衬底上的电流限制层，设置在电流限制层中的吸收层以及设置在吸收层上的电接触层。 电流限制层以图案掺杂并且被配置为减少器件中的暗电流。 光子器件可以是光电二极管或激光器。
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