- 专利标题： Resistive memory device containing carbon barrier and method of making thereof
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申请号： US15611029申请日： 2017-06-01
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公开(公告)号： US10340449B2公开(公告)日： 2019-07-02
- 发明人: Ming-Che Wu , Alvaro Padilla , Tanmay Kumar
- 申请人： SANDISK TECHNOLOGIES LLC
- 申请人地址： US TX Plano
- 专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人： SANDISK TECHNOLOGIES LLC
- 当前专利权人地址： US TX Plano
- 代理机构： The Marbury Law Group, PLLC
- 主分类号： H01L45/00
- IPC分类号： H01L45/00 ; H01L27/24 ; G11C13/00
摘要：
A resistive memory device, such as a BMC ReRAM device, includes at least one resistive memory element which contains a carbon barrier material portion and a resistive memory material portion that is disposed between a first electrode and a second electrode.
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