Invention Grant
- Patent Title: Nonvolatile memory device and storage device including nonvolatile memory device
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Application No.: US15360661Application Date: 2016-11-23
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Publication No.: US10346097B2Publication Date: 2019-07-09
- Inventor: Ji-Suk Kim , Jung-Yun Yun , Bongsoon Lim
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine, Whitt & Francos, PLLC
- Priority: KR10-2015-0166119 20151126; KR10-2016-0024580 20160229
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G06F3/06 ; G11C11/56 ; G11C16/34 ; G11C16/08 ; G11C16/10 ; G11C16/32

Abstract:
A storage device includes a nonvolatile memory device and a controller configured to send first data, an address, and a first command to the nonvolatile memory device. The controller also sends at least one data to the nonvolatile memory device after sending the first command. The nonvolatile memory device is configured to initiate a program operation, which is based on the first data, in response to the first command. When receiving the at least one data from the controller, the nonvolatile memory device is configured to continue to perform the program operation based on the first data and the at least one data.
Public/Granted literature
- US20170154685A1 NONVOLATILE MEMORY DEVICE AND STORAGE DEVICE INCLUDING NONVOLATILE MEMORY DEVICE Public/Granted day:2017-06-01
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