Invention Grant
- Patent Title: Electromigration sign-off methodology
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Application No.: US16046142Application Date: 2018-07-26
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Publication No.: US10346576B2Publication Date: 2019-07-09
- Inventor: Yu-Tseng Hsien , Chin-Shen Lin , Ching-Shun Yang , Jui-Feng Kuan
- Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Eschweiler & Potashnik, LLC
- Main IPC: G06F17/50
- IPC: G06F17/50 ; H01L21/768 ; G01R31/28

Abstract:
The present disclosure, in some embodiments, relates to a method of performing electromigration sign-off. The method includes determining an environmental temperature having a same value corresponding to a plurality of interconnect wires within a plurality of electrical networks of an integrated chip design. A plurality of actual temperatures having different values corresponding to different ones of the plurality of interconnect wires are determined. The plurality of actual temperatures are respectively determined by adding the environmental temperature to a real temperature that accounts for Joule heating one of the plurality of interconnect wires. An electromigration margin for a first interconnect wire within a first electrical network of the plurality of electrical networks is determined. The electromigration margin is determined at a first one of the plurality of actual temperatures corresponding to the first interconnect wire. The electromigration margin is compared to an electromigration metric.
Public/Granted literature
- US20180330036A1 ELECTROMIGRATION SIGN-OFF METHODOLOGY Public/Granted day:2018-11-15
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