Apparatuses, systems, and methods are disclosed for magnetoresistive random access memory. A magnetic tunnel junction for storing data includes a fixed layer, a barrier layer, and a composite free layer. A barrier layer is disposed between a fixed layer and a composite free layer. A composite free layer includes an in-plane anisotropy free layer, a perpendicular magnetic anisotropy (PMA) inducing layer, and a ferromagnetic amorphous layer. A PMA-inducing layer may be disposed such that an in-plane anisotropy free layer is between a barrier layer and the PMA-inducing layer. A ferromagnetic amorphous layer may be disposed between an in-plane anisotropy free layer and a PMA-inducing layer.