Invention Grant
- Patent Title: Semiconductor device
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Application No.: US15879610Application Date: 2018-01-25
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Publication No.: US10347552B2Publication Date: 2019-07-09
- Inventor: Ryuichi Oikawa , Toshihiko Ochiai , Shuuichi Kariyazaki , Yuji Kayashima , Tsuyoshi Kida
- Applicant: Renesas Electronics Corporation
- Applicant Address: JP Koutou-ku, Tokyo
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Koutou-ku, Tokyo
- Agency: Sughrue Mion, PLLC
- Main IPC: H01L23/14
- IPC: H01L23/14 ; H01L23/00 ; H01L23/32 ; H01L25/065 ; H01L25/07 ; H01L25/18 ; H01L23/498 ; H01L23/66 ; H01L23/538 ; H01L23/50

Abstract:
A semiconductor device includes first and second semiconductor components mounted on an interposer mounted on a wiring substrate, and electrically connected to each other via the interposer. Also, a plurality of wiring layers of the interposer include first, second and third wiring layers which are stacked in order from a main surface side to be a reference. In addition, in a first region of the interposer sandwiched between the first semiconductor component and the second semiconductor component, a ratio of a reference potential wiring in the third wiring layer is higher than a ratio of a reference potential wiring in the first wiring layer. Further, in the first region, a ratio of a signal wiring in the first wiring layer is higher than a ratio of a signal wiring in the third wiring layer.
Public/Granted literature
- US20180151460A1 SEMICONDUCTOR DEVICE Public/Granted day:2018-05-31
Information query
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