Invention Grant
- Patent Title: Transistor with asymmetric spacers
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Application No.: US16159673Application Date: 2018-10-14
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Publication No.: US10347731B2Publication Date: 2019-07-09
- Inventor: Zhenxing Bi , Kangguo Cheng , Heng Wu , Peng Xu
- Applicant: International Business Machines Corporation
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Otterstedt, Ellenbogen & Kammer, LLP
- Agent Vazken Alexanian
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/08 ; H01L29/66 ; H01L21/8234 ; H01L29/06 ; H01L29/78
Abstract:
A field-effect transistor device including an asymmetric spacer assembly allows lower parasitic capacitance on the drain side of the device and lower resistance on the source side. The asymmetric spacer assembly is formed by a self-aligned process, resulting in less gate/junction overlap on the drain side of the device and greater gate/junction overlap on the source side of the device. Asymmetric transistors having small gate lengths can be obtained without overlay/misalignment issues.
Public/Granted literature
- US20190140064A1 TRANSISTOR WITH ASYMMETRIC SPACERS Public/Granted day:2019-05-09
Information query
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