Invention Grant
- Patent Title: Plasma generation and control using a DC ring
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Application No.: US15093031Application Date: 2016-04-07
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Publication No.: US10354841B2Publication Date: 2019-07-16
- Inventor: Jianping Zhao , Lee Chen , Barton G. Lane , Merritt Funk , Radha Sundararajan
- Applicant: Tokyo Electron Limited
- Applicant Address: JP Tokyo
- Assignee: TOKYO ELECTRON LIMITED
- Current Assignee: TOKYO ELECTRON LIMITED
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23F1/00 ; H01L21/306 ; H01J37/32
Abstract:
The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.
Public/Granted literature
- US20160300738A1 Plasma Generation and Control Using a DC Ring Public/Granted day:2016-10-13
Information query
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