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公开(公告)号：US11037798B2
公开(公告)日：2021-06-15
申请号：US15807330
申请日：2017-11-08
Applicant: Tokyo Electron Limited
Inventor： Barton G. Lane , Nasim Eibagi , Alok Ranjan , Peter L. G. Ventzek
IPC: H01L21/311 , H01L21/02 , H01L21/027 , H01L21/66
Abstract: Embodiments of the disclosure describe a cyclic etch method for carbon-based films. According to one embodiment, the method includes providing a substrate containing the carbon-based film, exposing the carbon-based film to an oxidizing plasma thereby forming an oxidized layer on the carbon-based film, thereafter, exposing the oxidized layer to a non-oxidizing inert gas plasma thereby removing the oxidized layer and forming a carbonized surface layer on the carbon-based film, and repeating the exposing steps at least once.
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公开(公告)号：US20150170925A1
公开(公告)日：2015-06-18
申请号：US14571806
申请日：2014-12-16
Applicant: Tokyo Electron Limited
Inventor： Lee Chen , Peter L.G. Ventzek , Barton G. Lane
IPC: H01L21/3065 , H01L21/67 , H01L21/02
CPC classification number: H01J37/32045 , H01J37/32174 , H01J37/32642 , H01J37/32935
Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may include a power electrode that may be opposite a bias electrode and a focus ring electrode that surrounds the substrate. In one embodiment, the power electrode may be coupled to a direct current (DC) source. Power applied to the bias electrode may be used to draw ions to the substrate. The plasma density may be made more uniform by applying a focus ring voltage to the focus ring that is disposed around the substrate and/or the bias electrode.
Abstract translation: 本公开涉及一种等离子体处理系统，用于控制正被处理的衬底的边缘或周边附近的等离子体密度。 等离子体处理系统可以包括等离子体室，其可以使用等离子体接收和处理衬底，用于蚀刻衬底，掺杂衬底或在衬底上沉积膜。 本公开涉及等离子体处理系统，其可以包括可以与偏置电极相对的功率电极和围绕衬底的聚焦环电极。 在一个实施例中，功率电极可以耦合到直流（DC）源。 施加到偏置电极的功率可以用于将离子吸引到衬底。 通过向设置在基板和/或偏置电极周围的聚焦环施加聚焦环电压，可以使等离子体密度更均匀。
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公开(公告)号：US20190103254A1
公开(公告)日：2019-04-04
申请号：US15723005
申请日：2017-10-02
Applicant: Tokyo Electron Limited
Inventor： Barton G. Lane , Peter L. G. Ventzek
Abstract: Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication process to provide global uniformity. Such plasma sources are resonant structures operating at radio frequencies at or higher than microwave values.
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公开(公告)号：US20180240720A1
公开(公告)日：2018-08-23
申请号：US15439723
申请日：2017-02-22
Applicant: Tokyo Electron Limited
Inventor： Barton G. Lane
CPC classification number: G03F1/42 , G03F7/70625 , G03F7/70633 , H01L21/0274 , H01L22/12
Abstract: Described herein are technologies to facilitate the fabrication of substrates, such as semiconductor wafers. More particularly, technologies described herein facilitate the correct placement of patterns of lines and spaces on a substrate. The resulting patterned substrate is the product of photolithography process and/or the pattern transference (e.g., etching) that occurs during the fabrication of substrates (e.g., semiconductor wafers). The scope of the present invention is pointed out in the appending claims.
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公开(公告)号：US10002744B2
公开(公告)日：2018-06-19
申请号：US14571806
申请日：2014-12-16
Applicant: Tokyo Electron Limited
Inventor： Lee Chen , Peter L. G. Ventzek , Barton G. Lane
IPC: H01J37/32
Abstract: This disclosure relates to a plasma processing system for controlling plasma density near the edge or perimeter of a substrate that is being processed. The plasma processing system may include a plasma chamber that can receive and process the substrate using plasma for etching the substrate, doping the substrate, or depositing a film on the substrate. This disclosure relates to a plasma processing system that may include a power electrode that may be opposite a bias electrode and a focus ring electrode that surrounds the substrate. In one embodiment, the power electrode may be coupled to a direct current (DC) source. Power applied to the bias electrode may be used to draw ions to the substrate. The plasma density may be made more uniform by applying a focus ring voltage to the focus ring that is disposed around the substrate and/or the bias electrode.
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Patent Agency Ranking
公开(公告)号：US10459334B2
公开(公告)日：2019-10-29
申请号：US15439723
申请日：2017-02-22
Applicant: Tokyo Electron Limited
Inventor： Barton G. Lane
IPC: H01L21/027 , H01L21/66 , G03F1/42 , G03F7/20
Abstract: Described herein are technologies to facilitate the fabrication of substrates, such as semiconductor wafers. More particularly, technologies described herein facilitate the correct placement of patterns of lines and spaces on a substrate. The resulting patterned substrate is the product of photolithography process and/or the pattern transference (e.g., etching) that occurs during the fabrication of substrates (e.g., semiconductor wafers). The scope of the present invention is pointed out in the appending claims.
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公开(公告)号：US10354841B2
公开(公告)日：2019-07-16
申请号：US15093031
申请日：2016-04-07
Applicant: Tokyo Electron Limited
Inventor： Jianping Zhao , Lee Chen , Barton G. Lane , Merritt Funk , Radha Sundararajan
IPC: C23C16/00 , C23F1/00 , H01L21/306 , H01J37/32
Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.
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公开(公告)号：US11551909B2
公开(公告)日：2023-01-10
申请号：US15723005
申请日：2017-10-02
Applicant: Tokyo Electron Limited
Inventor： Barton G. Lane , Peter L. G. Ventzek
IPC: H01J37/32 , H01L21/67 , H01L21/683
Abstract: Described herein are architectures, platforms and methods for providing localized high density plasma sources igniting local gasses during a wafer fabrication process to provide global uniformity. Such plasma sources are resonant structures operating at radio frequencies at or higher than microwave values.
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公开(公告)号：US20180130669A1
公开(公告)日：2018-05-10
申请号：US15807330
申请日：2017-11-08
Applicant: Tokyo Electron Limited
Inventor： Barton G. Lane , Nasim Eibagi , Alok Ranjan , Peter L. G. Ventzek
IPC: H01L21/311 , H01L21/027 , H01L21/66 , H01L21/02
CPC classification number: H01L21/31138 , H01L21/02321 , H01L21/0276 , H01L21/31144 , H01L22/12
Abstract: Embodiments of the disclosure describe a cyclic etch method for carbon-based films. According to one embodiment, the method includes providing a substrate containing the carbon-based film, exposing the carbon-based film to an oxidizing plasma thereby forming an oxidized layer on the carbon-based film, thereafter, exposing the oxidized layer to a non-oxidizing inert gas plasma thereby removing the oxidized layer and forming a carbonized surface layer on the carbon-based film, and repeating the exposing steps at least once.
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公开(公告)号：US20160300738A1
公开(公告)日：2016-10-13
申请号：US15093031
申请日：2016-04-07
Applicant: Tokyo Electron Limited
Inventor： Jianping Zhao , Lee Chen , Barton G. Lane , Merritt Funk , Radha Sundararajan
CPC classification number: H01J37/3244 , H01J37/32192 , H01J37/32568 , H01J37/32577
Abstract: The present invention provides a SWP (surface wave plasma) processing system that does not create underdense conditions when operating at low microwave power and high gas pressure, thereby achieving a larger process window. The DC ring subsystem can be used to adjust the edge to central plasma density ratio to achieve uniformity control in the SWP processing system.
Abstract translation: 本发明提供了一种SWP（表面波等离子体）处理系统，其在低微波功率和高气体压力下工作时不会产生过度条件，从而实现更大的工艺窗口。 DC环形子系统可用于调整边缘到中心等离子体密度比，以实现SWP处理系统的均匀性控制。
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